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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
RJK0353DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 18A 8-SOP Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
RJK0355DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 12A 8-SOP Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
HAT2266N-EL-E | Renesas Technology America | MOSFET N-CH 60V 30A LFPAKI Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 30A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
RJK0355DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 30A WPAK Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
RJK0364DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 35A WPAK Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 17.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
HAT2164H-EL-E | Renesas Technology America | MOSFET N-CH 30V 60A 5LFPAK Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 | Доп. информация Искать в поставщиках | |
HAT2165N | Renesas Technology America | MOSFET N-CH 30V 55A LFPAKI Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 5180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
RJK0366DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 25A WPAK Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 12.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1010pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
RJK0354DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 16A 8-SOP Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1740pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FS70SM-06 | Renesas Technology America | MOSFET N-CH 60V 70A TO-3P Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 6540pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P | Доп. информация Искать в поставщиках | ||
HAT1072H | Renesas Technology America | MOSFET P-CH 30V 40A 5LFPAK Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 9500pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: 5LFPAK | Доп. информация Искать в поставщиках | ||
HAT2197R-EL-E | Renesas Technology America | MOSFET N-CH 30V 16A 8SOP Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 2650pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 | Доп. информация Искать в поставщиках | |
RJK0348DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 22A 8-SOP Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 5100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2315TYTR-E | Renesas Technology America | MOSFET N-CH 60V 2A 4-UPAK Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 173pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: UPAK | от 0,00 | Доп. информация Искать в поставщиках | |
RJK0390DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 65A W-PAK Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 65A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
HAT2160N-EL-E | Renesas Technology America | MOSFET N-CH 20V 60A LFPAKI Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
HAT2197R | Renesas Technology America | MOSFET N-CH 30V 16A 8-SOP Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 2650pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Доп. информация Искать в поставщиках | ||
HAT2165N-EL-E | Renesas Technology America | MOSFET N-CH 30V 55A LFPAKI Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 5180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
HAT2195R | Renesas Technology America | MOSFET N-CH 30V 18A 8-SOP Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 23nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 3400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 | Доп. информация Искать в поставщиках | |
RJK0332DPB-00#J0 | Renesas Technology America | MOSFET N-CH 30V 35A LFPAK Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 2180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
RJK0366DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 11A 8-SOP Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1010pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK1058 | Renesas Technology America | MOSFET N-CH 160V 7A TO-3P Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-3P | Доп. информация Искать в поставщиках | ||
RJK03B9DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1110pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
RJK0394DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 35A W-PAK Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 17.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 2430pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
RJK0396DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 9nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1330pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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