 - Габаритный чертеж |
SI4630DY-T1-E3 — MOSFET N-CH 25V 40A 8-SOIC
| ||||||||||||||||||||||||||||||
| Войти Регистрация |
|
|||||||||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI3455ADV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 2.7A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIA411DJ-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 12A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 38nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1499DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 1.6A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 16nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 650pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.78W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM65N20-30-E3 | Vishay/Siliconix | MOSFET N-CH 200V 65A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 5100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1070X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 1.2A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 99 mOhm @ 1.2A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 8.3nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.2A · Input Capacitance (Ciss) @ Vds: 385pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7423DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 7.4A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 11.7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7110DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 13.5A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 21.1A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8435DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 20V 10A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 35nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1600pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 6.25W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM110P06-07L-E3 | Vishay/Siliconix | MOSFET P-CH 60V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 345nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 11400pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI4436DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 8A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3446ADV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 6A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 640pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4840DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 10A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIB411DK-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 9A SC75-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 13W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-75-6L | Доп. информация Искать в поставщиках | |
 | SI4642DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 34A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 5540pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 7.8W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
| SI5485DU-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 42nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Surface Mount · Package / Case: PowerPAK® ChipFET Single | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | SI4825DY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 8.1A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 71nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.1A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3434DV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 4.6A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1302DL-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 600MA SOT323-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 480 mOhm @ 600mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 600mA · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 280mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4408DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 14A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 32nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1417EDH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 2.7A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1056X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 1.32A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.32A · Input Capacitance (Ciss) @ Vds: 400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7804DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 6.5A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE818DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 75V 60A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 3200pF @ 38V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (L) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3465DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7112DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 11.3A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11.3A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
RoHS 
Без свинца
