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SI7802DN-T1-E3 — MOSFET N-CH 250V 1.24A 1212-8
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI3473DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 5.9A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7413DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 8.4A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 51nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4488DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 3.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI2351DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 2.8A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 250pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.1W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM75N06-09L-E3 | Vishay/Siliconix | MOSFET N-CH 60V 90A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE802DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 60A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 23.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7000pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (L) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2328DS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 100V 1.15A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.15A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7415DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 3.6A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4430BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 14A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 36nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4456DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 33A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 122nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 5670pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 7.8W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7465DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 3.2A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4800BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3458DV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 3.2A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM23N15-73-E3 | Vishay/Siliconix | MOSFET N-CH 150V 23A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 73 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 1290pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1021R-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 190MA SC-75A Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.7nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 23pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4386DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 11A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1022R-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 330MA SC-75A Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 330mA · Input Capacitance (Ciss) @ Vds: 30pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7148DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 75V 28A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 2900pF @ 35V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 96W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7106DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 12.5A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5401DC-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 5.2A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2333DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 4.1A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.1A · Input Capacitance (Ciss) @ Vds: 1100pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7848DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 10.4A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.83W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM47N10-24L-E3 | Vishay/Siliconix | MOSFET N-CH 100V 47A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM110N04-2M3L-E3 | Vishay/Siliconix | MOSFET N-CH 40V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 360nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 13600pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| SI7384DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 11A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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