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SI7866ADP-T1-E3 — MOSFET N-CH 20V 40A PPAK 8SOIC
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | BS250KL-TR1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 270MA TO92-18RM Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 3nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 270mA · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 800mW · Mounting Type: Through Hole · Package / Case: TO-18-3, TO-92-18RM | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7898DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 3A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7308DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 6A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 665pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 19.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3495DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 5.3A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 38nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4686DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 18.2A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.2A · Input Capacitance (Ciss) @ Vds: 1220pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5.2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM50N06-16L-E3 | Vishay/Siliconix | MOSFET N-CH 60V 50A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1325pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3433BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 4.3A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3460BDV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 24nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.5W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI2306BDS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 3.16A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 4.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3.16A · Input Capacitance (Ciss) @ Vds: 305pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1411DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 150V 420MA SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 6.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 420mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5406DC-T1-E3 | Vishay/Siliconix | MOSFET N-CH 12V 6.9A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7478DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 15A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE832DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 77nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3800pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI6463BDQ-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 60nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.05W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7846DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 4A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7703EDN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 4.3A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI6467BDQ-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 6.8A 8-TSSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 70nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.05W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2309DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 340 mOhm @ 1.25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.25A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4464DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 1.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM90P10-19L-E3 | Vishay/Siliconix | MOSFET P-CH 100V 90A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 326nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 11100pF @ 50V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 375W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7114DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 11.7A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18.3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| TN0201K-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 420MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 420mA · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI2318DS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 3A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 540pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7107DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 9.8A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4336DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 17A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 5600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках |
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