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SPD03N50C3 — MOSFET N-CH 560V 3.2A DPAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IPD60R600CP | Infineon Technologies | MOSFET N-CH 650V 6.1A TO-252 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.1A · Input Capacitance (Ciss) @ Vds: 550pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPD04N50C3 | Infineon Technologies | MOSFET N-CH 560V 4.5A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| IPA60R199CP | Infineon Technologies | MOSFET N-CH 650V 16A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1520pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPP07N60C3 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SPW11N80C3 | Infineon Technologies | MOSFET N-CH 800V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 85nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1600pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI60R199CP | Infineon Technologies | MOSFET N-CH 650V 16A I2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1520pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 139W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPW50R399CP | Infineon Technologies | MOSFET N-CH 560V 9A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 890pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPD02N60C3 | Infineon Technologies | MOSFET N-CH 650V 1.8A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 12.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| SPD08N50C3 | Infineon Technologies | MOSFET N-CH 560V 7.6A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.6A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SPI20N65C3 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPP60R250CP | Infineon Technologies | MOSFET N-CH 650V 12A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPA90R500C3 | Infineon Technologies | MOSFET N-CH 900V 11A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1700pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 | Доп. информация Искать в поставщиках | |
| SPU02N60C3 | Infineon Technologies | MOSFET N-CH 650V 1.8A IPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 12.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPB11N60C3 | Infineon Technologies | MOSFET N-CH 650V 11A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SPD07N60C3 | Infineon Technologies | MOSFET N-CH 650V 7.3A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| IPI60R600CP | Infineon Technologies | MOSFET N-CH 650V 6.1A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.1A · Input Capacitance (Ciss) @ Vds: 550pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SPA20N60CFD | Infineon Technologies | MOSFET N-CH 600V 20.7A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 124nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPW60R075CP | Infineon Technologies | MOSFET N-CH 650V 39A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 75 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 116nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 4000pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 313W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP60R600CP | Infineon Technologies | MOSFET N-CH 650V 6.1A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.1A · Input Capacitance (Ciss) @ Vds: 550pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPW12N50C3 | Infineon Technologies | MOSFET N-CH 560V 11.6A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11.6A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP60R125CP | Infineon Technologies | MOSFET N-CH 650V 25A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2500pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP50R199CP | Infineon Technologies | MOSFET N-CH 550V 17A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 139W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB60R520CP | Infineon Technologies | MOSFET N-CH 650V 6.8A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 630pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPA50R399CP | Infineon Technologies | MOSFET N-CH 550V 9A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 890pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPW90R120C3 | Infineon Technologies | MOSFET N-CH 900V 36A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 36A · Input Capacitance (Ciss) @ Vds: 6800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 417W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках |
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