Дискретные полупроводники · MOSFET транзисторы (одиночные)

SPI21N50C3 — MOSFET N-CH 560V 21A I2PAK

Производитель	Infineon Technologies
Вредные вещества	RoHS Без свинца

Серия	CoolMOS™
Rds On (Max) @ Id, Vgs	190 mOhm @ 13.1A, 10V
Drain to Source Voltage (Vdss)	560V
Gate Charge (Qg) @ Vgs	95nC @ 10V
Current - Continuous Drain (Id) @ 25° C	21A
Input Capacitance (Ciss) @ Vds	2400pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	208W
Mounting Type	Through Hole
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
Встречается под наим.	SP000014463, SPI21N50C3X, SPI21N50C3XK

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	SPW35N60CFD	Infineon Technologies	MOSFET N-CH 600V 34.1A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 118 mOhm @ 21.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 212nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34.1A · Input Capacitance (Ciss) @ Vds: 5060pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 313W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPS02N60C3	Infineon Technologies	MOSFET N-CH 650V 1.8A TO251-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 12.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPP15N65C3	Infineon Technologies	MOSFET N-CH 650V 15A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-220-3	от 0,00	Доп. информация Искать в поставщиках
	SPD04N50C3	Infineon Technologies	MOSFET N-CH 560V 4.5A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	SPW11N80C3	Infineon Technologies	MOSFET N-CH 800V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 85nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1600pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPA07N65C3	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPA07N60C3	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPW24N60C3	Infineon Technologies	MOSFET N-CH 650V 24.3A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24.3A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 240W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPA60R199CP	Infineon Technologies	MOSFET N-CH 650V 16A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1520pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPW50R350CP	Infineon Technologies	MOSFET N-CH 550V 10A TO247-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1020pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPW32N50C3	Infineon Technologies	MOSFET N-CH 560V 32A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 4200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 284W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPW60R299CP	Infineon Technologies	MOSFET N-CH 650V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPP02N80C3	Infineon Technologies	MOSFET N-CH 800V 2A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 290pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00	Доп. информация Искать в поставщиках
	SPP03N60S5	Infineon Technologies	MOSFET N-CH 600V 3.2A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPB60R250CP	Infineon Technologies	MOSFET N-CH 650V 12A TO263-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPW15N60C3	Infineon Technologies	MOSFET N-CH 650V 15A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1660pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPA11N65C3	Infineon Technologies	MOSFET N-CH 650V 11A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP60R520CP	Infineon Technologies	MOSFET N-CH 650V 6.8A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 630pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPA15N60CFD	Infineon Technologies	MOSFET N-CH 650V 13.4A TO220-FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 84nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.4A · Input Capacitance (Ciss) @ Vds: 1820pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	SPI07N60C3	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPD07N60C3T	Infineon Technologies	MOSFET N-CH 650V 7.3A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IPP90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 710pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPA21N50C3	Infineon Technologies	MOSFET N-CH 560V 21A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34.5W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPB20N60S5	Infineon Technologies	MOSFET N-CH 600V 20A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 103nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPA16N50C3	Infineon Technologies	MOSFET N-CH 560V 16A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках

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