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![]() | SPB03N60C3 | Infineon Technologies | MOSFET N-CH 650V 3.2A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
IPA60R520CP | Infineon Technologies | MOSFET N-CH 650V 6.8A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 630pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | SPA16N50C3 | Infineon Technologies | MOSFET N-CH 560V 16A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | IPP60R099CP | Infineon Technologies | MOSFET N-CH 650V 31A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 255W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPB04N60C3 | Infineon Technologies | MOSFET N-CH 650V 4.5A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPD04N80C3 | Infineon Technologies | MOSFET N-CH 800V 4A TO-252 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPD03N60C3 | Infineon Technologies | MOSFET N-CH 650V 3.2A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPP11N60S5 | Infineon Technologies | MOSFET N-CH 650V 11A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1460pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | |
IPB60R385CP | Infineon Technologies | MOSFET N-CH 650V 9A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 790pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IPD60R520CP | Infineon Technologies | MOSFET N-CH 650V 6.8A TO-252 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 630pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | SPI07N65C3 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPW35N60C3 | Infineon Technologies | MOSFET N-CH 650V 34.6A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 21.9A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34.6A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 313W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPI16N50C3 | Infineon Technologies | MOSFET N-CH 560V 16A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPI08N50C3 | Infineon Technologies | MOSFET N-CH 560V 7.6A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.6A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPP17N80C3 | Infineon Technologies | MOSFET N-CH 800V 17A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 177nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 2320pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPP08N50C3 | Infineon Technologies | MOSFET N-CH 560V 7.6A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.6A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
SPB20N60C3 | Infineon Technologies | MOSFET N-CH 650V 20.7A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | SPI07N60S5 | Infineon Technologies | MOSFET N-CH 600V 7.3A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 970pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPB03N60S5 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPB12N50C3 | Infineon Technologies | MOSFET N-CH 560V 11.6A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11.6A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
IPI90R800C3 | Infineon Technologies | MOSFET N-CH 900V 6.9A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | SPW47N60C3 | Infineon Technologies | MOSFET N-CH 650V 47A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 320nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 6800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 415W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPD03N60S5 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO-252 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPP11N65C3 | Infineon Technologies | MOSFET N-CH 650V 11A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
SPU03N60C3 | Infineon Technologies | MOSFET N-CH 650V 3.2A TO-251 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
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