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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
STD7NM50N-1

STD7NM50N-1 — MOSFET N-CH 500V 5A IPAK

ПроизводительSTMicroelectronics
Вредные веществаRoHS   Без свинца
СерияMDmesh™
Rds On (Max) @ Id, Vgs780 mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs12nC @ 10V
Current - Continuous Drain (Id) @ 25° C5A
Input Capacitance (Ciss) @ Vds400pF @ 50V
FET PolarityN-Channel
FET FeatureStandard
Power - Max45W
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
STB25NM60N-1STB25NM60N-1STMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STP13NM50NSTP13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP30NM50NSTP30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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STB8NM60T4STB8NM60T4STMicroelectronicsMOSFET N-CH 650V 8A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STP7NM80STP7NM80STMicroelectronicsMOSFET N-CH 800V 6.5A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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STW43NM60NSTW43NM60NSTMicroelectronicsMOSFET N-CH 600V 35A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STP8NM50FPSTP8NM50FPSTMicroelectronicsMOSFET N-CH 550V 8A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 415pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STB6NM60NSTB6NM60NSTMicroelectronicsMOSFET N-CH 600V 4.6A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB11NM60N-1STB11NM60N-1STMicroelectronicsMOSFET N-CH 600V 10A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STI19NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STI12NM50NSTMicroelectronicsMOSFET N-CH 500V 11A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STB15NM60NSTB15NM60NSTMicroelectronicsMOSFET N-CH 600V 14A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STF30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STD11NM60N-1STD11NM60N-1STMicroelectronicsMOSFET N-CH 600V 10A I-PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STW23NM60NSTW23NM60NSTMicroelectronicsMOSFET N-CH 600V 19A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STP14NM65NSTP14NM65NSTMicroelectronicsMOSFET N-CH 650V 12A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STB25NM50N-1STB25NM50N-1STMicroelectronicsMOSFET N-CH 500V 22A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STY60NM50STY60NM50STMicroelectronicsMOSFET N-CH 500V 60A MAX247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 266nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 560W  ·  Mounting Type: Through Hole  ·  Package / Case: MAX247™
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STW19NM65NSTW19NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STW12NM60NSTW12NM60NSTMicroelectronicsMOSFET N-CH 600V 10A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STB20NM60-1STB20NM60-1STMicroelectronicsMOSFET N-CH 600V 20A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STD3NM60T4STD3NM60T4STMicroelectronicsMOSFET N-CH 600V 3A DPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 324pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STP10NM60NSTMicroelectronicsMOSFET N-CH 600V 8A TO220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 540pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STL20NM20NSTL20NM20NSTMicroelectronicsMOSFET N-CH 200V 20A PWRFLAT6X5
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerFlat™ (6 x 5)
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STF19NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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