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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
STF13NM60N

STF13NM60N — MOSFET N-CH 600V 11A TO-220FP

ПроизводительSTMicroelectronics
Вредные веществаRoHS   Без свинца
СерияMDmesh™
Rds On (Max) @ Id, Vgs360 mOhm @ 5.5A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs30nC @ 10V
Current - Continuous Drain (Id) @ 25° C11A
Input Capacitance (Ciss) @ Vds790pF @ 50V
FET PolarityN-Channel
FET FeatureStandard
Power - Max25W
Mounting TypeThrough Hole
Package / CaseTO-220FP
Встречается под наим.497-8892-5
Аналогичные по характеристикам
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STF42N65M5STF42N65M5STMicroelectronicsMOSFET N-CH 650V 33A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 4650pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STD9NM50N-1STD9NM50N-1STMicroelectronicsMOSFET N-CH 500V 7.5A IPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STW21NM60NSTW21NM60NSTMicroelectronicsMOSFET N-CH 600V 17A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STP25NM60NSTP25NM60NSTMicroelectronicsMOSFET N-CH 600V 21A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STB11NM60T4STB11NM60T4STMicroelectronicsMOSFET N-CH 650V 11A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STF24NM65NSTMicroelectronicsMOSFET N-CH 650V 19A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STW13NM50NSTW13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STF11NM60NSTF11NM60NSTMicroelectronicsMOSFET N-CH 600V 10A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STB12NM60NSTB12NM60NSTMicroelectronicsMOSFET N-CH 600V 10A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STD9NM50NSTD9NM50NSTMicroelectronicsMOSFET N-CH 500V 7.5A DPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STB30NM60NSTB30NM60NSTMicroelectronicsMOSFET N-CH 600V 25A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 91nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB16NM50NSTB16NM50NSTMicroelectronicsMOSFET N-CH 500V 15A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STP16NM50NSTP16NM50NSTMicroelectronicsMOSFET N-CH 500V 15A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STI23NM60NSTI23NM60NSTMicroelectronicsMOSFET N-CH 600V 19A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STF9NM50NSTF9NM50NSTMicroelectronicsMOSFET N-CH 500V 7.5A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STF25NM50NSTF25NM50NSTMicroelectronicsMOSFET N-CH 500V 22A TO220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STP20NM60ASTP20NM60ASTMicroelectronicsMOSFET N-CH 650V 20A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD10NM65NSTD10NM65NSTMicroelectronicsMOSFET N-CH 650V 9A DPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STP6NM60NSTP6NM60NSTMicroelectronicsMOSFET N-CH 600V 4.6A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD5NM60-1STD5NM60-1STMicroelectronicsMOSFET N-CH 650V 5A IPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STW42N65M5STW42N65M5STMicroelectronicsMOSFET N-CH 650V 33A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 4650pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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STB25NM50NSTB25NM50NSTMicroelectronicsMOSFET N-CH 500V 22A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STI24NM65NSTMicroelectronicsMOSFET N-CH 650V 19A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STB25NM60N-1STB25NM60N-1STMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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