Дискретные полупроводники · MOSFET транзисторы (одиночные)

STP42N65M5 — MOSFET N-CH 650V 33A TO-220

Производитель	STMicroelectronics
Вредные вещества	RoHS Без свинца

Серия	MDmesh™
Rds On (Max) @ Id, Vgs	79 mOhm @ 16.5A, 10V
Drain to Source Voltage (Vdss)	650V
Gate Charge (Qg) @ Vgs	100nC @ 10V
Current - Continuous Drain (Id) @ 25° C	33A
Input Capacitance (Ciss) @ Vds	4650pF @ 100V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	190W
Mounting Type	Through Hole
Package / Case	TO-220
Встречается под наим.	497-8791-5

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	STF11NM80	STMicroelectronics	MOSFET N-CH 800V 11A TO220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 43.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STF7NM50N	STMicroelectronics	MOSFET N-CH 500V 5A TO-220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 400pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB12NM60N-1	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 960pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках
	STB13NM50N-1	STMicroelectronics	MOSFET N-CH 500V 12A I2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 960pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STP12NM50	STMicroelectronics	MOSFET N-CH 500V 12A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP8NM50	STMicroelectronics	MOSFET N-CH 550V 8A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 415pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	STU10NM65N	STMicroelectronics	MOSFET N-CH 650V 9A IPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 850pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW21NM50N	STMicroelectronics	MOSFET N-CH 500V 18A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP20NM50FP	STMicroelectronics	MOSFET N-CH 550V 20A TO-220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW55NM60N	STMicroelectronics	MOSFET N-CH 600V 51A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 51A · Input Capacitance (Ciss) @ Vds: 5800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 350W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STE48NM50	STMicroelectronics	MOSFET N-CH 550V 48A ISOTOP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 117nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 3700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Chassis Mount · Package / Case: ISOTOP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD13NM60N	STMicroelectronics	MOSFET N-CH 600V 11A DPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 790pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD6NM60N-1	STMicroelectronics	MOSFET N-CH 650V 4.6A IPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 420pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STB12NM50T4	STMicroelectronics	MOSFET N-CH 550V 12A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A DPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 420pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	STF14NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1300pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW45NM60	STMicroelectronics	MOSFET N-CH 650V 45A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 134nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 417W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP24NM65N	STMicroelectronics	MOSFET N-CH 650V 19A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 2500pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB14NM65N	STMicroelectronics	MOSFET N-CH 650V 12A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1300pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 560pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB11NM80T4	STMicroelectronics	MOSFET N-CH 800V 11A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 43.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB25NM60N-1	STMicroelectronics	MOSFET N-CH 600V 21A I2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 84nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2400pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STP13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 960pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 94nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 2740pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB8NM60T4	STMicroelectronics	MOSFET N-CH 650V 8A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках

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