Дискретные полупроводники · MOSFET транзисторы (одиночные)

STU11NM60ND — MOSFET N-CH 600V 10A IPAK

Производитель	STMicroelectronics
Вредные вещества	RoHS Без свинца

Серия	FDmesh™
Rds On (Max) @ Id, Vgs	450 mOhm @ 5A, 10V
Drain to Source Voltage (Vdss)	600V
Gate Charge (Qg) @ Vgs	30nC @ 10V
Current - Continuous Drain (Id) @ 25° C	10A
Input Capacitance (Ciss) @ Vds	850pF @ 50V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	90W
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	STF15NM60ND	STMicroelectronics	MOSFET N-CH 600V 14A TO-220FP Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1250pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	STP11NM60FDFP	STMicroelectronics	MOSFET N-CH 600V 11A TO-220FP Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP11NM60FD	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD12NM50ND	STMicroelectronics	MOSFET N-CH 500V 11A DPAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 850pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STI25NM60ND	STMicroelectronics	MOSFET N-CH 600V 21A I2PAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2400pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STI21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A I2PAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STP11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A TO-220 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 850pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP20NM50FD	STMicroelectronics	MOSFET N-CH 500V 20A TO-220 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 192W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STF8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A TO-220FP Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 560pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	STW14NM50FD	STMicroelectronics	MOSFET N-CH 500V 14A TO-247 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-247-3		Доп. информация Искать в поставщиках
	STP23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A TO-220 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19.5A · Input Capacitance (Ciss) @ Vds: 2050pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STF23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A TO-220FP Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19.5A · Input Capacitance (Ciss) @ Vds: 2050pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	STP8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 560pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB20NM60D	STMicroelectronics	MOSFET N-CH 600V 20A D2PAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 192W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STF11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A TO-220FP Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 850pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	STI15NM60ND	STMicroelectronics	MOSFET N-CH 600V 14A I2PAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1250pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STW20NM50FD	STMicroelectronics	MOSFET N-CH 500V 20A TO-247 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A TO-247 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW20NM60FD	STMicroelectronics	MOSFET N-CH 600V 20A TO-247 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB30NM60ND	STMicroelectronics	MOSFET N-CH 600V 25A D2PAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW55NM60ND	STMicroelectronics	MOSFET N-CH 600V 51A TO-247 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 51A · Input Capacitance (Ciss) @ Vds: 5800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 350W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A DPAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 850pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD8NM60ND	STMicroelectronics	MOSFET N-CH 600V 7A DPAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 560pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A TO-220 Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STI11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK Серия: FDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 850pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках

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