050-7159 Rev A 4-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
APT30M17JFLL
300V 135A 0.017
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
FAST RECOVERY BODY DIODE
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 67.5A)
Zero Gate Voltage Drain Current (V
DS
= 300V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 240V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
300
0.017
250
1000
100
3
5
APT30M17JFLL
300
135
540
30
40
694
5.56
-55 to 150
300
135
50
3600
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
050-7159 Rev A 4-2004
DYNAMIC CHARACTERISTICS
APT30M17JFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -135A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -135A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -135A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -135A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
135
540
1.3
8
T
j
= 25C
200
300
T
j
= 125C
250
525
T
j
= 25C
1.5
T
j
= 125C
4.4
T
j
= 25C
15
T
j
= 125C
25
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.18
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
=150V
I
D
= 135A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
150V
I
D
=
135A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
200V, V
GS
= 15V
I
D
=
100A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
200V, V
GS
= 15V
I
D
=
100A, R
G
=
5
MIN
TYP
MAX
14100
3285
185
230
85
105
19
31
44
13
1120
1250
1325
1460
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = .40mH, R
G
=
25
, Peak I
L
= 135A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
I
D
-
135A
di
/
dt
700A/s
V
R
300
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7159 Rev A 4-2004
Typical Performance Curves
APT30M17JFLL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
6.5V
7.5V
5.5V
7V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6V
0
5
10
15
20
25
30
0
2
4
6
8
10
0
50
100
150
200
250
300
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
400
350
300
250
200
150
100
50
0
140
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D = 67.5A
V
GS = 10V
NORMALIZED TO
V
GS
= 10V @ 67.5A
350
300
250
200
150
100
50
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0268
0.109
0.0426
0.0456F
0.765F
23.5F
Power
(watts)
Junction
temp. (
C)
RC MODEL
Case temperature. (
C)
8V
050-7159 Rev A 4-2004
APT30M17JFLL
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
300
0
10
20
30
40
50
0
50
100
150
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
540
100
50
10
16
12
8
4
0
TC =+25C
TJ =+150C
SINGLE PULSE
10mS
1mS
100S
TJ =+150C
TJ =+25C
VDS= 150V
VDS= 60V
VDS= 240V
I
D = 135A
30,000
10,000
1,000
100
400
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
40
60
80
100
120
40
60
80
100
120
40
50
60
70
80
90
100 110 120
0
5
10 15 20 25 30 35 40 45 50
V
DD = 200V
I
D = 50A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
250
200
150
100
50
0
1500
1200
900
600
300
0
V
DD = 200V
R
G = 5
T
J = 125C
L = 100H
V
DD
= 200V
R
G
= 5
T
J
= 125C
L = 100H
E
ON
includes
diode reverse recovery.
100
80
60
40
20
0
6,000
5,000
4,000
3,000
2,000
1,000
0
050-7159 Rev A 4-2004
Typical Performance Curves
APT30M17JFLL
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT30DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
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