Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

On State Drain Current

> I

D(on)

x R

DS(on)

Max, V

= 10V)

Drain-Source On-State Resistance

= 10V, 22A)

Zero Gate Voltage Drain Current (V

= 300V, V

= 0V)

Zero Gate Voltage Drain Current (V

= 240V, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1mA)

050-7164 Rev A 1-2003

MAXIMUM RATINGS

All Ratings: T

= 25°C unless otherwise specified.

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

D(on)

DS(on)

DSS

GSS

GS(th)

UNIT

Volts

Amps

Ohms

µA

Volts

MIN

TYP

MAX

300

0.075

250

1000

±100

APT30M75

300

176

±30
±40

329

2.63

-55 to 150

300

44
30

1300

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

TO-247

PAK

BFLL

SFLL

APT30M75BFLL

APT30M75SFLL

300V 44A 0.075

· Lower Input Capacitance

· Increased Power Dissipation

· Lower Miller Capacitance

· Easier To Drive

· Lower Gate Charge, Qg

· TO-247 or Surface Mount D

PAK Package

FAST RECOVERY BODY DIODE

Power MOS 7

is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7

by significantly lowering R

DS(ON)

and Q

. Power MOS 7

combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

POWER MOS 7

FREDFET

DYNAMIC CHARACTERISTICS

APT30M75 BFLL - SFLL

050-7164 Rev A 1-2003

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

(Body Diode)

Diode Forward Voltage

= 0V, I

= -44A)

Peak Diode Recovery

Reverse Recovery Time
(I

= -44A,

= 100A/µs)

Reverse Recovery Charge
(I

= -44A,

= 100A/µs)

Peak Recovery Current
(I

= -44A,

= 100A/µs)

Symbol

RRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

iss

oss

rss

(on)

(off)

Characteristic
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge
Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 200V

= 44A @ 25°C

= 15V

= 200V

= 44A @ 25°C

= 0.6

MIN

TYP

MAX

3018

771

43
57
21
23
13

UNIT

MIN

TYP

MAX

176

1.3

= 25°C

200

= 125°C

400

= 25°C

1.1

= 125°C

2.7

= 25°C

= 125°C

15.1

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.38

UNIT

°C/W

Characteristic

Junction to Case
Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

4 Starting T

+25°C, L = 1.34mH, R

, Peak I

= 44A

numbers reflect the limitations of the test circuit rather than the

device itself.

44A

700A/µs

DSS

150

APT Reserves the right to change, without notice, the specifications and information contained herein.

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x Z

JC + TC

SINGLE PULSE

, THERMAL IMPEDANCE (°C/W)

-5

-4

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.5

0.1

0.3

0.7

0.9

0.05

050-7164 Rev A 1-2003

APT30M75 BFLL - SFLL

Typical Performance Curves

100

1.40

1.30

1.20

1.10

1.00

0.90

0.80

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

6.5V

7.5

VGS =15 &10V

8.5V

VGS=10V

VGS=20V

TJ = +125°C

TJ = +25°C

TJ = -55°C

VDS> ID (ON) x RDS(ON) MAX.

250 µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

GS(TH)

, THRESHOLD VOLTAGE

DSS

, DRAIN-TO-SOURCE BREAKDOWN

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VOLTAGE (NORMALIZED)

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

FIGURE 4, TRANSFER CHARACTERISTICS

FIGURE 5, R

DS(ON)

vs DRAIN CURRENT

, CASE TEMPERATURE (°C)

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, JUNCTION TEMPERATURE (°C)

, CASE TEMPERATURE (°C)

FIGURE 8, R

DS(ON)

vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

100

120

100

125

150

-50

-25

100 125 150

-50

-25

100 125 150

-50

-25

75 100 125 150

160

140

120

100

2.5

2.0

1.5

1.0

0.5

0.0

NORMALIZED TO

= 10V @ I

D = 22A

GS = 10V

0.0329

0.158

0.189

0.00334

0.00802

0.165

Power

(Watts)

Junction

temp. ( "C)

Case temperature

RC MODEL

APT30M75 BFLL - SFLL

050-7164 Rev A 1-2003

1mS

100µS

TC =+25°C

TJ =+150°C

SINGLE PULSE

OPERATION HERE

LIMITED BY RDS (ON)

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

, REVERSE DRAIN CURRENT (AMPERES)

,

CAPACITANCE (pF)

100

300

0.3

0.5

0.7

0.9

1.1

1.3

1.5

176

100

VDS=150V

VDS=60V

VDS=240V

D = 44A

TJ =+150°C

TJ =+25°C

Crss

Ciss

Coss

10mS

20,000

10,000

1,000

100

200

100

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)
1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Drain
Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

TO-247 Package Outline

15.95 (.628)

16.05 (.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)
1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018) {3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Drain (Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51 (.532)

Revised

8/29/97

1.04 (.041)

1.15 (.045)

13.79 (.543)

13.99 (.551)

Revised

4/18/95

PAK Package Outline

APT's devices are covered by one or more of the following U.S.patents:

4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

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