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Электронный компонент: APT4030CNR

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POWER MOS IV
TM
Avalanche Rated
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT4030CNR
400V 15.0A 0.300
050-4016 Rev -
G
D
S
TO-254
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
3
UNIT
Volts
Amps
Volts
Watts
W/
C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
400
15
0.30
250
1000
100
2
4
APT4030CNR
400
15
60
30
40
150
1.2
-55 to 150
300
15
20
800
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
Faster Switching
100% Avalanche Tested
Popular TO-254 Package
Low Gate Charge
Similar to the 2N7227, JX2N7227 and JV2N7227
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
R
G
= 1.80
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
DYNAMIC CHARACTERISTICS
APT4030CNR
MIN
TYP
MAX
15
22
1500
1800
385
540
160
240
71
105
8
12
36
54
14
28
23
46
43
64
15
30
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3
Starting T
j
=
+25
C, L = 7.11mH, R
G
=
25
, Peak I
L
= 15A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
JC
R
JA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
15
60
1.3
284
568
4.5
9.0
UNIT
W/
C
MIN
TYP
MAX
0.80
50
THERMAL CHARACTERISTICS
050-4016 Rev -
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
I , DRAIN CURRENT (AMPERES) D
I , DRAIN CURRENT (AMPERES) D
I , DRAIN CURRENT (AMPERES) D
V (TH), THRESHOLD VOLTAGE (VOLTS)
GS
I , DRAIN CURRENT (AMPERES) D
R (ON), DRAIN-TO-SOURCE ON RESISTANCE
DS
(NORMALIZED)
R (ON), DRAIN-TO-SOURCE ON RESISTANCE
DS
(NORMALIZED)
BV , DRAIN-TO-SOURCE BREAKDOWN
DSS
VOLTAGE (NORMALIZED)
(NORMALIZED)
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
0
50 100 150
200
16
12
8
4
0
T
J
= 25
C
2
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
-50 -25 0 25 50 75 100 125 150
-50
-25
0
25
50
75
100
125 150
-50 -25 0 25 50 75 100 125 150
0 2 4 6 8
0 1
2
3
4
5
DS D DS
V > I (ON) x R (ON)MAX.
230
SEC. PULSE TEST
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
APT4030CNR
T
J
= -55
C
25 50
75
100 125 150
T
J
= +125
C
T
J
= +25
C
T
J
= -55
C
T
J
= +25
C
T
J
= +125
C
15
12
9
6
3
0
4V
4.5V
5V
5.5V
V
GS
=6V
20
15
10
5
0
12
10
8
6
4
2
0
V
GS
=10V
6V
5V
4.5V
4V
5.5V
V
GS
=20V
V
GS
=10V
1.75
1.50
1.25
1.00
0.75
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
050-4016 Rev -
C, CAPACITANCE (pF)
I , REVERSE DRAIN CURRENT (AMPERES) DR
I , DRAIN CURRENT (AMPERES) D
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
g
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.07 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
V
DS
=80V
V
DS
=200V
V
DS
=320V
0
.5 1.0 1.5
2.0
0
10
20
30
40
50
TO-254AA Package Outline
I
D
= I
D
[Cont.]
1
5
10
50 100
400
APT4030CNR
0
20
40
60
80
100
T
C
=+25
C
T
J
=+150
C
SINGLE PULSE
1
S
10
S
100
S
1mS
10mS
60
10
5
1
0.5
.1
10,000
1,000
100
10
100
50
20
10
5
2
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
C
rss
C
oss
C
iss
T
J
= +150
C
T
J
= +25
C
050-4016 Rev -
DC