050-7116 Rev B 3-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
APT50M50JLL
500V 71A 0.050
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
MOSFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 35.5A)
Zero Gate Voltage Drain Current (V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
500
0.050
100
500
100
3
5
APT50M50JLL
500
71
284
30
40
595
4.76
-55 to 150
300
71
50
3200
DYNAMIC CHARACTERISTICS
APT50M50JLL
050-7116 Rev B 3-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
71A
)
Reverse Recovery Time (I
S
= -I
D
71A
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D
71A
, dl
S
/dt = 100A/s)
Peak Diode Recovery
dv
/
dt
5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
71
284
1.3
680
17.0
8
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.21
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 71A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
250V
I
D
=
71A
@ 25C
R
G
=
1.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
333V, V
GS
= 15V
I
D
=
71A, R
G
=
3
INDUCTIVE SWITCHING @ 125C
V
DD
=
333V V
GS
= 15V
I
D
=
71A, R
G
=
3
MIN
TYP
MAX
10550
2060
105
200
50
105
24
18
55
10
1000
1040
1580
1160
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 1.27mH, R
G
=
25
, Peak I
L
= 71A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
71A
di
/
dt
700A/s
V
R
500V
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7116 Rev B 3-2004
APT50M50JLL
Typical Performance Curves
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
7.5V
5V
5.5V
6.5V
6V
7V
15 &10V
VDS> ID (ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS(TH)
, THRESHOLD VOLTAGE
B
V
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
20
40
60 80 100 120 140 160 180
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
200
180
160
140
120
100
80
60
40
20
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D = 35.5A
V
GS = 10V
180
160
140
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0492
0.142
0.0189
0.0273F
0.469F
44.2F
Power
(Watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
NORMALIZED TO
V
GS
= 10V @ I
D
= 35.5A
APT50M50JLL
050-7116 Rev B 3-2004
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT
(AMPERES)
C, CAPACITANCE (pF)
Crss
Ciss
Coss
VDS=250V
VDS=100V
VDS=400V
TJ =+150C
TJ =+25C
1
10
100
500
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
10mS
1mS
100S
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
I
D = 71A
356
100
10
1
16
12
8
4
0
30,000
10,000
1,000
100
10
200
100
10
1
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 333V
R
G = 3
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
5
10 15 20 25 30 35 40 45 50
V
DD = 333V
I
D = 71A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
V
DD = 333V
R
G = 3
T
J = 125C
L = 100H
V
DD = 333V
R
G = 3
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
160
140
120
100
80
60
40
20
0
7000
6000
5000
4000
3000
2000
1000
0
050-7116 Rev B 3-2004
APT50M50JLL
Typical Performance Curves
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT60DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
10%
t
d(on)
t
r
10%
5%
Switching Energy
5%
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
90%
90%
90%
t
d(off)
t
f
10%
0
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
Switching Energy
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