050-7227 Rev A 7-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
APT55M65JFLL
550V 63A 0.065
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
FAST RECOVERY BODY DIODE
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 31.5A)
Zero Gate Voltage Drain Current (V
DS
= 550V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 440V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
550
0.065
250
1000
100
3
5
APT55M65JFLL
550
63
252
30
40
595
4.76
-55 to 150
300
63
50
3200
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
050-7227 Rev A 7-2004
DYNAMIC CHARACTERISTICS
APT55M65JFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -63A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -63A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -63A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -63A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
63
256
1.3
15
T
j
= 25C
300
T
j
= 125C
600
T
j
= 25C
2.6
T
j
= 125C
10
T
j
= 25C
17
T
j
= 125C
34
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.21
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 275V
I
D
= 63A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
275V
I
D
=
63A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
367V, V
GS
= 15V
I
D
=
63A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
367V, V
GS
= 15V
I
D
=
63A, R
G
=
5
MIN
TYP
MAX
9165
1700
80
205
55
105
23
16
55
10
1155
1510
1650
1500
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 1.61mH, R
G
=
25
, Peak I
L
= 63A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
I
D
-
63A
di
/
dt
700A/s
V
R
550V
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7227 Rev A 7-2004
Typical Performance Curves
APT55M65JFLL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
5.5V
6.5V
4.5V
5V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
20
40
60
80 100 120 140 160 180
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
180
160
140
120
100
80
60
40
20
0
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D = 31.5A
V
GS = 10V
NORMALIZED TO
V
GS
= 10V @ 31.5A
200
180
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
6V
VGS =15 & 10V
0.0492
0.142
0.0189
0.0273F
0.469F
44.2F
Power
(watts)
Junction
temp. (
C)
RC MODEL
Case temperature. (
C)
050-7227 Rev A 7-2004
APT55M65JFLL
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
550
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
252
100
50
10
1
16
12
8
4
0
TC =+25C
TJ =+150C
SINGLE PULSE
10mS
1mS
100S
TJ =+150C
TJ =+25C
VDS= 275V
VDS= 110V
VDS= 440V
I
D = 63A
30,000
10,000
1,000
100
10
300
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 367V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
0
5
10 15 20 25 30 35 40 45 50
V
DD = 367V
I
D = 63A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
180
160
140
120
100
80
60
40
20
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD = 367V
R
G = 5
T
J = 125C
L = 100H
V
DD = 367V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
180
160
140
120
100
80
60
40
20
0
6,000
5,000
4,000
3,000
2,000
1,000
0
050-7227 Rev A 7-2004
Typical Performance Curves
APT55M65JFLL
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
10%
0
t
d(off)
90%
t
f
90%
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT60DF60
T
J
125C
T
J
125C
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