050-7438 Rev A 4-2003
T-Max
TM
G
C
E
APT65GP60B2
600V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 400V, 54A
Low Gate Charge
50 kHz operation @ 400V, 76A
Ultrafast Tail Current shutoff
SSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
1000
5000
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1000A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 65A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 65A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT65GP60B2
600
20
30
100
96
250
250A@600V
833
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
IGBT
G
C
E
050-7438 Rev A 4-2003
APT65GP60B2
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 65A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 600V
Inductive Switching (25C)
V
CC
= 400V
V
GE
= 15V
I
C
= 65A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 400V
V
GE
= 15V
I
C
= 65A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
7400
580
35
7.5
210
50
65
250
30
54
91
65
605
1408
896
30
54
128
91
605
1925
1470
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.15
N/A
6.10
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7438 Rev A 4-2003
APT65GP60B2
TYPICAL PERFORMANCE CURVES
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
8
9 10
0
50
100
150
200
250
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=-55C
T
C
=125C
T
C
=25C
V
CE
=480V
V
CE
=300V
V
CE
=120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 65A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=-55C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 32.5A
I
C
= 65A
I
C
=130A
I
C
=130A
I
C
= 65A
100
90
80
70
60
50
40
30
20
10
0
250
200
150
100
50
0
4
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3
2.5
2
1.5
1
0.5
0
300
250
200
150
100
50
0
I
C
= 32.5A
050-7438 Rev A 4-2003
APT65GP60B2
TYPICAL PERFORMANCE CURVES
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
V
CE
= 400V
R
G
= 5
L = 100 H
V
GE
=
15V,T
J
=125C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125C
V
GE
=
10V,T
J
=25C
V
GE
=
15V,T
J
=25C
T
J
=
25C, V
GE
=
10V
or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
5
, L
=
100
H, V
CE
=
400V
R
G
=
5
, L
=
100
H, V
CE
=
400V
VCE = 400V
L = 100 H
RG = 5
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
25 or 125C,V
GE
=
10V
VCE = 400V
VGE = +15V
RG = 5
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
VCE = 400V
VGE = +15V
T
J
= 125C
VCE = 400V
L = 100 H
RG = 5
T
J
=125C, V
GE
=15V
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=125C,V
GE
=10V
T
J
= 25C, V
GE
=10V
T
J
= 25C, V
GE
=15V
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
0
10
20
30
40
50
-50
-25
0
25
50
75
100 125
60
50
40
30
20
10
0
160
140
120
100
80
60
40
20
0
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
160
140
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
6000
5000
4000
3000
2000
1000
0
E
off
130A
E
on2
130A
E
on2
32.5A
E
off
65A
E
on2
65A
E
off
32.5A
E
on2
32.5A
E
off
65A
E
on2
65A
E
on2
130A
E
off
130A
E
off
32.5A
V
CE
= 400V
T
J
= 25C or 125C
R
G
= 5
L = 100 H
050-7438 Rev A 4-2003
APT65GP60B2
TYPICAL PERFORMANCE CURVES
10
30
50
70
90
110
130
187
100
50
10
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10,000
5,000
1,000
500
100
50
10
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 400V
RG = 5
Cies
Coes
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
J
C
diss
JC
F
min(f
, f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0683086
0.0822491
0.0216664
0.2556989
Power
(Watts)
Junction
temp. ( "C)
Case temperature
RC MODEL
050-7438 Rev A 4-2003
APT65GP60B2
TYPICAL PERFORMANCE CURVES
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
T-MAX
(B2) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
Emitter
Gate
Collector (Cathode)
Collector Current
Gate Voltage
Collector Voltage
t
r
10%
90%
5%
t
d(on)
T
J
= 125 C
5 %
Switching Energy
Collector Voltage
Collector Current
T
Gate Voltage
t
f
10%
90%
t
d(off)
90%
0
T
J
= 125 C
Switching Energy
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT30DF60
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
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