050-7424 Rev B 5-2003
T-Max
TM
G
C
E
APT75GP120B2
1200V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 800V, 20A
Low Gate Charge
50 kHz operation @ 800V, 38A
Ultrafast Tail Current shutoff
RBSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
1000
5000
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1000A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT75GP120B2
1200
20
30
100
91
300
300A @ 960V
1042
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25C
7
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Reverse Bias Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
IGBT
G
C
E
050-7424 Rev B 5-2003
APT75GP120B2
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 75A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 960V
Inductive Switching (25C)
V
CC
= 600V
V
GE
= 15V
I
C
= 75A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 600V
V
GE
= 15V
I
C
= 75A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
7035
460
80
7.5
320
50
140
300
20
40
163
56
1620
4100
2500
20
40
244
115
1620
5850
4820
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.12
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7424 Rev B 5-2003
TYPICAL PERFORMANCE CURVES
APT75GP120B2
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9 10
0
50
100
150
200
250
300
350
6
8
10
12
14
16
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
T
C
=125C
T
C
=25C
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 75A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
160
140
120
100
80
60
40
20
0
250
200
150
100
50
0
5
4
3
2
1
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
5
4
3
2.0
1.0
0
300
250
200
150
100
50
0
V
CE
=960V
V
CE
=600V
V
CE
=240V
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 37.5A
I
C
= 75A
I
C
= 150A
I
C
= 150A
I
C
= 37.5A
I
C
= 75A
050-7424 Rev B 5-2003
APT75GP120B2
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
V
CE
= 600V
R
G
= 5
L = 100 H
V
GE
=
10V,T
J
=125C
V
GE
= 15V
V
GE
= 10V
V
GE
=15V,T
J
=125C
V
GE
=
10V,T
J
=25C
V
GE
=
15V,T
J
=25C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
25 or 125C,V
GE
=
10V
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
0
20
40
60
80
100 120 140 160
0
10
20
30
40
50
0
25
50
75
100
125
40
30
20
10
0
120
100
80
60
40
20
0
14000
12000
10000
8000
6000
4000
2000
0
20000
15000
10000
5000
350
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
12000
10000
8000
6000
4000
2000
0
15000
12500
10000
7500
5000
2500
0
V
CE
= 600V
T
J
= 25C or 125C
R
G
= 5
L = 100 H
R
G
=
5
, L
=
100
H, V
CE
=
600V
R
G
=
5
, L
=
100
H, V
CE
=
600V
T
J
=125C, V
GE
=15V
T
J
=125C,V
GE
=10V
T
J
= 25C, V
GE
=10V
T
J
= 25C, V
GE
=15V
E
off
150A
E
on2
150A
E
on2
37.5A
E
off
75A
E
on2
75A
E
off
37.5A
E
on2
37.5A
E
off
75A
E
on2
75A
E
on2
150A
E
off
150A
E
off
37.5A
VCE = 600V
L = 100 H
RG = 5
VCE = 600V
VGE = +15V
T
J
= 125C
VCE = 600V
VGE = +15V
RG = 5
T
J
=
25C, V
GE
=
10V
or 15V
T
J
=
125C, V
GE
=
10V
or 15V
VCE = 600V
L = 100 H
RG = 5
050-7424 Rev B 5-2003
TYPICAL PERFORMANCE CURVES
APT75GP120B2
10
30
50
70
90
110
130
150
140
100
50
10
.3
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
20,000
10,000
1,000
500
100
50
10
350
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0 100 200 300 400 500 600 700 800 900 1000
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 800V
RG = 5
Cies
Coes
max
max1
max 2
max1
d (on)
r
d( off )
f
diss
cond
max 2
on 2
off
J
C
diss
JC
F
min(f
, f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.00792
0.0475
0.0656
0.00354F
0.0307F
0.361F
Power
(watts)
Junction
temp (
C)
RC MODEL
Case temperature (
C)
050-7424 Rev B 5-2003
APT75GP120B2
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
Emitter
Gate
Collector (Cathode)
T-MAX
TM
(B2) Package Outline
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
I
C
A
D.U.T.
APT60DF120
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
T
J
= 125 C
Gate Voltage
Collector Voltage
Collector Current
10%
t
d(on)
90%
t
r
5 %
Switching Energy
5%
10%
Collector Current
0
Collector Voltage
Gate Voltage
Switching
Energy
10%
90%
t
f
T
J
= 125 C
90%
t
d(off)
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