APTGF200U120D
A
P
T
G
F
200
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 6
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25C
275
I
C
Continuous
Collector
Current
T
c
= 80C
200
I
CM
Pulsed Collector Current
T
c
= 25C
600
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
1136 W
SSOA
Switching Safe Operating Area
T
j
= 150C
600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
CK
EK
G
E
C
C
CK
E
G
EK
V
CES
= 1200V
I
C
= 200A @ Tc = 80C
Application
Zero Current Switching resonant mode
Features
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Single Switch
with Series diodes
NPT IGBT Power Module
APTGF200U120D
A
P
T
G
F
200
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1.5mA
1200
V
T
j
= 25C
1.5
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125C
7.0
mA
T
j
= 25C
3.2
3.7
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 200A
T
j
= 125C
4.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 4mA
4.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
300
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
13.8
C
oes
Output
Capacitance
1.32
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
880
nF
Q
g
Total gate Charge
1320
Q
ge
Gate Emitter Charge
140
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 600V
I
C
= 200A
800
nC
T
d(on)
Turn-on
Delay
Time
35
T
r
Rise Time
65
T
d(off)
Turn-off Delay Time
320
T
f
Fall Time
30
E
on
Turn-on Switching Energy
21.6
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 200A
R
G
= 1.2
9.2
T
d(on)
Turn-on
Delay
Time
35
T
r
Rise Time
65
T
d(off)
Turn-off Delay Time
360
T
f
Fall Time
40
ns
E
on
Turn-on Switching Energy
27.9
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 200A
R
G
= 1.2
12.2
mJ
Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Repetitive Reverse Voltage
1200
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
240
A
I
F
= 240A
2
2.5
I
F
= 480A
2.3
V
F
Diode Forward Voltage
I
F
= 240A
T
j
= 125C
1.8
V
T
j
= 25C
400
t
rr
Reverse Recovery Time
I
F
= 240A
V
R
= 800V
di/dt =800A/s T
j
= 125C
470
ns
T
j
= 25C
4.8
Q
rr
Reverse Recovery Charge
I
F
= 240A
V
R
= 800V
di/dt =800A/s T
j
= 125C
16
C
APTGF200U120D
A
P
T
G
F
200
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.11
R
thJC
Junction
to
Case
Diode
0.23
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTGF200U120D
A
P
T
G
F
200
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
200
400
600
800
0
2
4
6
8
I
c
,
C
o
l
l
e
c
t
o
r C
u
rre
nt
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
J
=25C
T
J
=125C
0
50
100
150
200
0
1
2
3
4
I
c
,
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25C
T
J
=125C
0
200
400
600
800
1000
1200
0
4
8
12
16
V
GE
, Gate to Emitter Voltage (V)
I
c
,
C
o
l
l
e
c
t
o
r C
u
rre
nt
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0
200
400
600
800 1000 1200 1400
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
I
C
= 200A
T
J
= 25C
Ic=400A
Ic=200A
Ic=100A
0
1
2
3
4
5
6
7
8
9
9
10
11
12
13
14
15
16
V
GE
, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
V
CE
,
C
o
l
l
e
c
to
r
t
o
E
m
i
t
ter
V
o
l
t
a
g
e (V
)
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=400A
Ic=200A
Ic=100A
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
,
C
o
l
l
e
c
to
r
t
o
E
m
i
t
ter
V
o
l
t
a
g
e (V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
C
o
l
l
ect
o
r
to
E
m
i
t
ter
B
r
ea
kd
o
w
n
V
o
l
t
ag
e
(
N
orm
a
l
i
z
e
d)
Breakdown Voltage vs Junction Temp.
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100 125 150
T
C
, Case Temperature (C)
Ic
, D
C
C
o
ll
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
APTGF200U120D
A
P
T
G
F
200
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
V
GE
= 15V
25
30
35
40
45
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
t
d
(
o
n)
,
Tu
rn-
O
n D
e
l
a
y
Ti
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
V
CE
= 600V
R
G
= 1.2
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
200
250
300
350
400
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
t
d
(o
f
f
)
,
T
u
r
n
-O
ff
D
e
l
a
y
T
i
m
e
(n
s
)
V
CE
= 600V
R
G
= 1.2
V
GE
=15V
20
60
100
140
180
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
tr
,
R
i
s
e
T
i
m
e
(n
s
)
Current Rise Time vs Collector Current
V
CE
= 600V
R
G
= 1.2
T
J
= 25C
T
J
= 125C
20
30
40
50
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
t
f
, F
a
ll T
i
m
e
(
n
s
)
Current Fall Time vs Collector Current
V
CE
= 600V, V
GE
= 15V, R
G
= 1.2
T
J
=25C,
V
GE
=15V
T
J
=125C,
V
GE
=15V
0
20
40
60
80
100
120
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Turn-
O
n
E
n
e
r
gy
L
o
s
s
(
m
J
)
V
CE
= 600V
R
G
= 1.2
T
J
= 25C
T
J
= 125C
0
8
16
24
32
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
E
o
f
f
,
Turn-
of
f
E
n
e
r
g
y
Los
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 600V
V
GE
= 15V
R
G
= 1.2
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
40
48
56
64
72
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
w
i
t
c
h
i
n
g
E
n
er
g
y
L
o
s
ses
(m
J)
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V
T
J
= 125C
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
ch
i
n
g
E
n
e
r
g
y
L
o
ss
es (
m
J)
Switching Energy Losses vs Junction Temp.
V
CE
= 600V
V
GE
= 15V
R
G
= 1.2
APTGF200U120D
A
P
T
G
F
200
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
Cies
Cres
Coes
100
1000
10000
100000
0
10
20
30
40
50
C
,
C
a
pa
c
i
t
a
nc
e
(
pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0
100
200
300
400
500
600
700
0
400
800
1200
I
C
, Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
The
rm
a
l
I
m
pe
d
a
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
0
20
40
60
80
100
120
20
60
100
140
180
220
I
C
, Collector Current (A)
Operating Frequency vs Collector Current
F
m
a
x
,
O
p
e
r
a
t
i
ng Fr
e
que
nc
y
(
k
H
z
)
V
CE
= 600V
D = 50%
R
G
= 1.2
T
J
= 125C
T
C
= 75C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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