APTGT50H120T3
A
P
T
G
T
5
0
H
120T
3 R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
75
I
C
Continuous
Collector
Current
T
C
= 80C
50
I
CM
Pulsed Collector Current
T
C
= 25C
100
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
270 W
RBSOA Reverse Bias Save Operating Area
T
J
= 125C
100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q3
11
10
Q1
CR1
7
22
13 14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
V
CES
= 1200V
I
C
= 50A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
Trench IGBT
Power Module
APTGT50H120T3
A
P
T
G
T
5
0
H
120T
3 R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 2mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
5 mA
T
j
= 25C
1.4
1.7
2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125C
2.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3600
C
rss
Reverse Transfer Capacitance
V
GE
= 0V,V
CE
= 25V
f = 1MHz
160
pF
T
d(on)
Turn-on
Delay
Time
90
T
r
Rise
Time
30
T
d(off)
Turn-off Delay Time
420
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
70
ns
T
d(on)
Turn-on
Delay
Time
90
T
r
Rise
Time
50
T
d(off)
Turn-off Delay Time
520
T
f
Fall
Time
90
ns
E
on
Turn-on Switching Energy
5
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
5.5
mJ
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
60
A
I
F
= 60A
2
2.5
I
F
= 120A
2.3
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125C
1.8
V
T
j
= 25C
400
t
rr
Reverse Recovery Time
T
j
= 125C
470
ns
T
j
= 25C
1200
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 800V
di/dt =200A/s
T
j
= 125C
4000
nC
APTGT50H120T3
A
P
T
G
T
5
0
H
120T
3 R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
3 - 5
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.45
R
thJC
Junction
to
Case
Diode
0.9
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7 N.m
Wt Package
Weight
110 g
Package outline
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTGT50H120T3
A
P
T
G
T
5
0
H
120T
3 R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
20
40
60
80
100
0
1
2
3
4
V
CE
(V)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
0
20
40
60
80
100
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
2
4
6
8
10
12
10
30
50
70
90
110
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 18
T
J
= 125C
Eon
Eoff
4
5
6
7
8
9
10
11
12
0
20
40
60
80
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 50A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
20
40
60
80
100
120
0
400
800
1200
1600
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=18
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
d
a
nc
e
(
C
/
W
)
IGBT
APTGT50H120T3
A
P
T
G
T
5
0
H
120T
3 R
e
v 0, S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
C
(A
)
hard
switching
ZCS
ZVS
0
20
40
60
80
0
10
20
30
40
50
60
I
C
(A)
F
m
ax, O
p
er
at
in
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=600V
D=50%
R
G
=18
T
J
=125C
T
C
=75C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
n
c
e
(
C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP