APTGU180U120D
A
P
T
G
U
180U
120
D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 6
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25C
250
I
C
Continuous
Collector
Current
T
c
= 80C
180
I
CM
Pulsed Collector Current
T
c
= 25C
630
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
1041 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
630A @ 960V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
CK
EK
G
E
C
C
CK
E
G
EK
V
CES
= 1200V
I
C
= 180A @ Tc = 80C
Application
Zero Current Switching resonant mode
Features
Power MOS 7
Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 50kHz
range
- Soft recovery diodes
- Low diode VF
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single Switch
with Series diodes
PT IGBT Power Module
APTGU180U120D
A
P
T
G
U
180U
120
D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 750A
1200
V
T
j
= 25C
750
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125C
7500
A
T
j
= 25C
3.3
3.9
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 180A
T
j
= 125C
3.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 6mA
3
6
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
250
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
19.4
C
oes
Output
Capacitance
1.48
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.18
nF
Q
g
Total gate Charge
900
Q
ge
Gate Emitter Charge
126
Q
gc
Gate Collector Charge
V
GE
= 15V
V
Bus
= 600V
I
C
= 180A
372
nC
T
d(on)
Turn-on
Delay
Time
16
T
r
Rise Time
20
T
d(off)
Turn-off Delay Time
94
T
f
Fall Time
40
ns
E
on1
Turn-on Switching Energy
4.5
E
on2
Turn-on Switching Energy
7.8
E
off
Turn-off Switching Energy
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 180A
R
G
= 0.8
4.08
mJ
T
d(on)
Turn-on
Delay
Time
16
T
r
Rise Time
20
T
d(off)
Turn-off Delay Time
147
T
f
Fall Time
75
ns
E
on1
Turn-on Switching Energy
4.5
E
on2
Turn-on Switching Energy
12.8
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 180A
R
G
= 0.8
10.5
mJ
E
on2
includes diode reverse recovery In accordance with JEDEC standard JESD24-1
Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Repetitive Reverse Voltage
1200
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
200
A
I
F
= 200A
2
2.5
I
F
= 400A
2.3
V
F
Diode Forward Voltage
I
F
= 200A
T
j
= 125C
1.8
V
T
j
= 25C
420
t
rr
Reverse Recovery Time
I
F
= 200A
V
R
= 800V
di/dt =400A/s T
j
= 125C
580
ns
T
j
= 25C
2.5
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 800V
di/dt =400A/s T
j
= 125C
10.7
C
APTGU180U120D
A
P
T
G
U
180U
120
D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.12
R
thJC
Junction
to
Case
Diode
0.32
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTGU180U120D
A
P
T
G
U
180U
120
D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
C
=25C
T
C
=125C
0
80
160
240
320
400
480
0
1
2
3
4
5
Ic
,
Co
lle
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0
120 240 360 480 600 720 840 960
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
I
C
= 180A
T
J
= 25C
0
50
100
150
200
250
300
350
400
-50
0
50
100
150
T
C
, Case Temperature (C)
Ic
,
DC C
o
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
Breakdown Voltage vs Junction Temp.
Co
lle
c
t
o
r
t
o
E
m
it
t
e
r
Br
e
a
k
d
o
w
n
V
o
lt
a
g
e
(
N
o
r
m
a
liz
e
d
)
I
C
=360A
I
C
=180A
I
C
=90A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
25
50
75
100
125
T
J
, Junction Temperature (C)
On state Voltage vs Junction Temperature
V
CE
, Co
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
I
C
=360A
I
C
=180A
I
C
=90A
0
1
2
3
4
5
6
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, Co
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
C
=25C
T
C
=125C
0
80
160
240
320
400
480
0
1
2
3
4
5
Ic
, Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25C
T
J
=-55C
T
J
=125C
0
80
160
240
320
400
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
APTGU180U120D
A
P
T
G
U
180U
120
D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
Eon2, 360A
Eoff, 360A
Eon2, 180A
Eoff, 180A
Eon2, 90A
Eoff, 90A
0
4
8
12
16
20
24
28
32
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
Switching Energy Losses vs Junction Temp.
V
CE
= 600V
V
GE
= 15V
R
G
= 0.8
Eon2, 360A
Eoff, 360A
Eon2, 180A
Eoff, 180A
Eon2, 90A
Eoff, 90A
0
8
16
24
32
40
48
0
5
10
15
20
25
30
Gate Resistance (Ohms)
S
w
i
t
c
h
i
n
g E
n
e
r
gy
Los
s
e
s
(
m
J
)
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V
T
J
= 125C
T
J
= 25C
0
4
8
12
16
20
24
0
50
100 150 200 250 300 350 400
I
CE
, Collector to Emitter Current (A)
E
of
f
,
Turn
-
of
f
E
n
e
r
g
y
Los
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
T
J
=125C
V
CE
= 600V
V
GE
= 15V
R
G
= 0.8
T
J
=25C,
V
GE
=15V
T
J
=25C,
V
GE
=10V
T
J
=125C,
V
GE
=15V
T
J
=125C,
V
GE
=10V
0
4
8
12
16
20
24
28
32
0
50
100 150 200 250 300 350 400
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on
2
,
Tur
n-
O
n
E
n
e
r
gy
L
o
s
s
(
m
J
)
V
CE
= 600V
R
G
= 0.8
T
J
= 25C
0
20
40
60
80
100
0
50
100 150 200 250 300 350 400
I
CE
, Collector to Emitter Current (A)
t
f
, F
a
ll T
i
m
e
(
n
s
)
T
J
=125C
Current Fall Time vs Collector Current
V
CE
= 600V, V
GE
= 15V, R
G
= 0.8
V
GE
=15V
V
GE
=10V
0
10
20
30
40
50
60
0
50
100 150 200 250 300 350 400
I
CE
, Collector to Emitter Current (A)
tr
,
R
i
s
e
T
i
m
e
(n
s
)
Current Rise Time vs Collector Current
V
CE
= 600V
R
G
= 0.8
V
GE
=15V,
T
J
=25C
V
GE
=10V,
T
J
=25C
V
GE
=15V,
T
J
=125C
V
GE
=10V,
T
J
=125C
0
40
80
120
160
200
0
50
100 150 200 250 300 350 400
I
CE
, Collector to Emitter Current (A)
td
(o
ff)
,
T
u
r
n
-O
ff
D
e
l
a
y
T
i
m
e
(n
s
)
Turn-Off Delay Time vs Collector Current
V
C E
= 600V
R
G
= 0.8
0
10
20
30
40
0
50
100 150 200 250 300 350 400
I
CE
, Collector to Emitter Current (A)
t
d
(
o
n)
,
Turn-
O
n
D
e
l
a
y
T
i
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
V
GE
=10V
V
GE
=15V
T
J
= 25C
V
CE
= 600V
R
G
= 0.8
APTGU180U120D
A
P
T
G
U
180U
120
D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
hard
switching
ZCS
0
25
50
75
100
125
40
80
120
160
200
240
I
C
, Collector current (A)
Fm
a
x
,
O
p
e
r
a
t
i
ng Fre
que
nc
y
(
k
H
z
)
Operating Frequency vs Collector Current
V
CE
= 800V
D = 50%
R
G
= 0.8
T
J
= 125C
T
J
= 75C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
0
100
200
300
400
500
600
700
0
200
400
600
800
1000
I
C
, C
o
ll
e
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
Minimum Switching Safe Operating Area
Cies
Cres
Coes
10
100
1000
10000
100000
0
10
20
30
40
50
C
,
C
a
pa
c
i
t
a
nc
e
(
p
F)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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