APTGU30DDA120T3
A
P
T
G
U
30D
D
A
120T
3
R
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2004
APT website http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25C
45
I
C
Continuous
Collector
Current
T
c
= 80C
30
I
CM
Pulsed Collector Current
T
c
= 25C
105
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
208 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
105A @ 960V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
V
CES
= 1200V
I
C
= 30A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7
Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz
range
- Soft recovery parallel diodes
- Low diode VF
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Dual Boost chopper
PT IGBT Power Module
APTGU30DDA120T3
A
P
T
G
U
30D
D
A
120T
3
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2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250A
1200
V
T
j
= 25C
250
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125C
2500
A
T
j
= 25C
3.3 3.9
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 30A
T
j
= 125C
3.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 1
mA 3
6
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3240
C
oes
Output
Capacitance
248
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
31
pF
Q
g
Total gate Charge
150
Q
ge
Gate Emitter Charge
21
Q
gc
Gate Collector Charge
V
GE
= 15V
V
Bus
= 600V
I
C
= 30A
62
nC
T
d(on)
Turn-on
Delay
Time
16
T
r
Rise Time
20
T
d(off)
Turn-off Delay Time
94
T
f
Fall Time
40
ns
E
on1
Turn-on Switching Energy
750
E
on2
Turn-on Switching Energy
1305
E
off
Turn-off Switching Energy
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 30A
R
G
= 5
680
J
T
d(on)
Turn-on
Delay
Time
16
T
r
Rise Time
20
T
d(off)
Turn-off Delay Time
147
T
f
Fall Time
75
ns
E
on1
Turn-on Switching Energy
750
E
on2
Turn-on Switching Energy
2132
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 30A
R
G
= 5
1744
J
E
on2
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
T: Thermistor temperature
R
T
: Thermistor value at T
APTGU30DDA120T3
A
P
T
G
U
30D
D
A
120T
3
R
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2004
APT website http://www.advancedpower.com
3 - 6
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
60
A
I
F
= 60A
2
2.5
I
F
= 120A
2.3
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125C
1.8
V
T
j
= 25C
400
t
rr
Reverse Recovery Time
T
j
= 125C
470
ns
T
j
= 25C
1200
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 800V
di/dt =200A/s
T
j
= 125C
4000
nC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.6
R
thJC
Junction
to
Case
Diode
0.9
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7 N.m
Wt Package
Weight
110 g
Package outline
17
12
28
1
APTGU30DDA120T3
A
P
T
G
U
30D
D
A
120T
3
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2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
C
=25C
T
C
=125C
0
20
40
60
80
0
1
2
3
4
5
Ic
, C
o
lle
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0
20
40
60
80
100 120 140 160
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
it
t
e
r
V
o
l
t
a
g
e
(
V
)
I
C
= 30A
T
J
= 25C
0
10
20
30
40
50
60
70
-50
0
50
100
150
T
C
, Case Temperature (C)
Ic
, D
C
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
Breakdown Voltage vs Junction Temp.
C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
B
r
e
a
k
d
o
w
n
V
o
lt
a
g
e
(
N
o
r
m
a
lize
d
)
I
C
=60A
I
C
=30A
I
C
=15A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
25
50
75
100
125
T
J
, Junction Temperature (C)
On state Voltage vs Junction Temperature
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
I
C
=60A
I
C
=30A
I
C
=15A
0
1
2
3
4
5
6
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
C
=25C
T
C
=125C
0
20
40
60
80
0
1
2
3
4
5
Ic
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25C
T
J
=-55C
T
J
=125C
0
20
40
60
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
APTGU30DDA120T3
A
P
T
G
U
30D
D
A
120T
3
R
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pt
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,
2004
APT website http://www.advancedpower.com
5 - 6
Eon2, 60A
Eoff, 60A
Eon2, 30A
Eoff, 30A
Eon2, 15A
Eoff, 15A
0
2
4
6
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
ch
i
n
g
E
n
er
g
y
L
o
s
se
s (m
J
)
Switching Energy Losses vs Junction Temp.
V
CE
= 600V
V
G E
= 15V
R
G
= 5
Eon2, 60A
Eoff, 60A
Eon2, 30A
Eoff, 30A
Eon2, 15A
Eoff, 15A
0
2
4
6
8
0
20
40
60
Gate Resistance (Ohms)
S
w
i
t
c
h
i
ng E
n
e
r
gy
Lo
s
s
e
s
(
m
J
)
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V
T
J
= 125C
T
J
= 25C
0
1
2
3
4
0
20
40
60
80
I
CE
, Collector to Emitter Current (A)
E
of
f
,
Tur
n-
of
f
E
n
e
r
gy
L
o
s
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
T
J
=125C
V
CE
= 600V
V
GE
= 15V
R
G
= 5
T
J
=25C,
V
GE
=15V
T
J
=25C,
V
GE
=10V
T
J
=125C,
V
GE
=15V
T
J
=125C,
V
GE
=10V
0
1
2
3
4
5
0
20
40
60
80
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on
2
,
Tu
rn-
O
n E
n
e
r
gy
Lo
s
s
(
m
J
)
V
CE
= 600V
R
G
= 5
T
J
= 25C
0
20
40
60
80
100
0
20
40
60
80
I
CE
, Collector to Emitter Current (A)
t
f
,
F
a
ll
T
i
m
e
(
n
s
)
T
J
=125C
Current Fall Time vs Collector Current
V
CE
= 600V, V
GE
= 15V, R
G
= 5
V
GE
=15V
V
GE
=10V
0
20
40
60
0
20
40
60
80
I
CE
, Collector to Emitter Current (A)
t
r
,
R
i
se
T
i
m
e
(n
s
)
Current Rise Time vs Collector Current
V
CE
= 600V
R
G
= 5
V
GE
=15V,
T
J
=25C
V
GE
=10V,
T
J
=25C
V
GE
=15V,
T
J
=125C
V
GE
=10V,
T
J
=125C
0
40
80
120
160
200
0
20
40
60
80
I
CE
, Collector to Emitter Current (A)
t
d
(o
ff
),
T
u
r
n
-
Of
f D
e
l
a
y
T
i
m
e
(n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 600V
R
G
= 5
0
10
20
30
40
0
20
40
60
80
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
T
u
rn-
O
n D
e
l
a
y
Ti
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
V
GE
=10V
V
GE
=15V
T
J
= 25C
V
CE
= 600V
R
G
= 5
APTGU30DDA120T3
A
P
T
G
U
30D
D
A
120T
3
R
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v 0 S
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pt
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m
be
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,
2004
APT website http://www.advancedpower.com
6 - 6
Hard
switching
ZCS
ZVS
0
40
80
120
160
200
0
10
20
30
40
50
I
C
, Collector current (A)
Fm
a
x
,
O
p
e
r
a
t
i
ng Fr
e
q
u
e
nc
y
(
k
H
z
)
Operating Frequency vs Collector Current
V
CE
= 600V
D = 50%
R
G
= 5
T
J
= 125C
T
C
= 75C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l
I
m
p
e
da
nc
e
(
C
/
W
)
0
20
40
60
80
100
120
0
200
400
600
800
1000
I
C
,
C
o
l
l
e
c
t
o
r c
u
rre
nt
(
A
)
V
CE
, Collector to Emitter Voltage (V)
Minimum Switching Safe Operating Area
Cies
Cres
Coes
10
100
1000
10000
0
10
20
30
40
50
C
,
C
a
p
a
c
i
t
a
nc
e
(
pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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