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APTM120UM70F-AlN
A
P
T
M
120U
M
70F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 6
D
G
DK
S
SK
D
S
DK
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1200
V
T
c
= 25C
171
I
D
Continuous
Drain
Current
T
c
= 80C
126
I
DM
Pulsed Drain current
684
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
70
m
P
D
Maximum Power Dissipation
T
c
= 25C
5000
W
I
AR
Avalanche current (repetitive and non repetitive)
24
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3200
mJ
V
DSS
= 1200V
R
DSon
= 70m
max @ Tj = 25C
I
D
= 171A @ Tc = 25C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
MOSFET Power Module
APTM120UM70F-AlN
A
P
T
M
120U
M
70F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 1.5mA
1200
V
V
GS
= 0V,V
DS
= 1200V
T
j
= 25C
1.5
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 1000V
T
j
= 125C
6
mA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 85.5A
70
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
30mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
43.5
C
oss
Output
Capacitance
6.6
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
1.2
nF
Q
g
Total gate Charge
1650
Q
gs
Gate Source Charge
192
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 600V
I
D
= 171A
1074
nC
T
d(on)
Turn-on
Delay
Time
20
T
r
Rise Time
17
T
d(off)
Turn-off Delay Time
245
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 800V
I
D
= 171A
R
G
=0.8
62
ns
E
on
Turn-on Switching Energy
7.6
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 800V
I
D
= 171A,
R
G
= 0.8
6.9
mJ
E
on
Turn-on Switching Energy
13.8
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 800V
I
D
= 171A,
R
G
= 0.8
8.5
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
171
I
S
Continuous Source current
(Body diode)
Tc = 80C
126
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 171A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
T
j
= 25C
375
t
rr
Reverse Recovery Time
I
S
= - 171A
V
R
= 600V
di
S
/dt = 600A/s
T
j
= 125C
860
ns
T
j
= 25C
12
Q
rr
Reverse Recovery Charge
I
S
= - 171A
V
R
= 600V
di
S
/dt = 600A/s
T
j
= 125C
54
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 171A di/dt 700A/s V
R
V
DSS
T
j
150C
APTM120UM70F-AlN
A
P
T
M
120U
M
70F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
Transistor
0.025 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM120UM70F-AlN
A
P
T
M
120U
M
70F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4.5V
5V
5.5V
6V
7V
0
60
120
180
240
300
360
420
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
60
120
180
240
300
360
420
480
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
60
120
180
240
300
360
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 85.5A
0
45
90
135
180
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM120UM70F-AlN
A
P
T
M
120U
M
70F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=85.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
1200
Ciss
Crss
Coss
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=240V
V
DS
=600V
V
DS
=960V
0
2
4
6
8
10
12
14
0
420
840
1260
1680
2100
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=171A
T
J
=25C
APTM120UM70F-AlN
A
P
T
M
120U
M
70F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
50
100
150
200
250
300
60
90
120 150 180 210 240 270
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=800V
R
G
=0.8
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
60
90
120 150 180 210 240 270
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=800V
R
G
=0.8
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
4
8
12
16
20
24
60
90 120 150 180 210 240 270
I
D
, Drain Current (A)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
V
DS
=800V
R
G
=0.8
T
J
=125C
L=100H
E
on
E
off
6
12
18
24
30
36
0
1
2
3
4
5
6
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=800V
I
D
=171A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
40
60
80
100
120
140
160
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=800V
D=50%
R
G
=0.8
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
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