APTM50H14FT3
A
P
T
M
50H
14F
T
3
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2004
APT website http://www.advancedpower.com
1 - 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
500
V
T
c
= 25C
26
I
D
Continuous
Drain
Current
T
c
= 80C
18
I
DM
Pulsed Drain current
105
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
140
m
P
D
Maximum Power Dissipation
T
c
= 25C
208
W
I
AR
Avalanche current (repetitive and non repetitive)
35
A
E
AR
Repetitive Avalanche Energy
30
E
AS
Single Pulse Avalanche Energy
1300
mJ
V
DSS
= 500V
R
DSon
= 140m
max @ Tj = 25C
I
D
= 26A @ Tc = 25C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
MOSFET Power Module
APTM50H14FT3
A
P
T
M
50H
14F
T
3
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2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250A
500
V
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 500V
100
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 13A
140
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
1mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
3259
C
oss
Output
Capacitance
709
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
51
pF
Q
g
Total gate Charge
72
Q
gs
Gate Source Charge
20
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 26A
36
nC
T
d(on)
Turn-on
Delay
Time
10
T
r
Rise Time
17
T
d(off)
Turn-off Delay Time
50
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 333V
I
D
= 26A
R
G
= 5
41
ns
E
on
Turn-on Switching Energy
326
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 333V
I
D
= 26A,
R
G
= 5
250
J
E
on
Turn-on Switching Energy
548
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 333V
I
D
= 26A,
R
G
= 5
288
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
26
I
S
Continuous Source current
(Body diode)
Tc = 80C
18
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 26A
1.3
V
dv/dt
Peak Diode Recovery
15
V/ns
T
j
= 25C
250
t
rr
Reverse Recovery Time
T
j
= 125C
525
ns
T
j
= 25C
1.6
Q
rr
Reverse Recovery Charge
I
S
= - 26A
V
R
= 250V
di
S
/dt = 100A/s
T
j
=
125C 6
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 26A di/dt 700A/s V
R
V
DSS
T
j
150C
APTM50H14FT3
A
P
T
M
50H
14F
T
3
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2004
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.60 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7
N.m
Wt Package
Weight
110 g
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68 k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTM50H14FT3
A
P
T
M
50H
14F
T
3
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2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
20
40
60
80
100
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
V
GS
=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
10
20
30
40
50
60
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
a
i
n
t
o
S
o
u
r
ce O
N
R
esi
s
t
an
ce
Normalized to
V
GS
=10V @ 13A
0
10
20
30
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
D
C
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM50H14FT3
A
P
T
M
50H
14F
T
3
R
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2004
APT website http://www.advancedpower.com
5 - 6
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
Breakdown Voltage vs Temperature
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
ai
n
t
o
S
o
u
r
ce O
N
r
esi
s
t
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=13A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
h
o
l
d V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
limited by R
DS
on
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DSon
Single pulse
T
J
=150C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=100V
V
DS
=250V
V
DS
=400V
0
2
4
6
8
10
12
14
0
20
40
60
80
100
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e (
V
)
Gate Charge vs Gate to Source Voltage
I
D
=26A
T
J
=25C
APTM50H14FT3
A
P
T
M
50H
14F
T
3
R
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,
2004
APT website http://www.advancedpower.com
6 - 6
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
D
, Drain Current (A)
t
d(
o
n
)
an
d
t
d(o
ff)
(n
s
)
V
DS
=333V
R
G
=5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
0
10
20
30
40
50
60
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=333V
R
G
=5
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
100
200
300
400
500
600
5
10
15
20
25
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=5
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
E
on
E
off
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
V
DS
=333V
R
G
=5
T
J
=125C
L=100H
E
on
E
off
0
0.5
1
1.5
2
2.5
0
10
20
30
40
50
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
En
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=26A
T
J
=125C
L=100H
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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