TO-247
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
050-4906 Rev D
D
G
S
ARF444 300W 300V 13.56MHz
ARF445 300W 300V 13.56MHz
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445.
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,
commercial, medical and industrial RF power amplifier applications.
Specified 300 Volt, 13.56 MHz Characteristics:
Output Power = 300 Watts.
Gain = 18.7dB (Typ.)
Efficiency = 83% (Typ.)
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Voltage
1
(I
D
(ON) = 3.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
900
7
250
1000
100
4
5.7
2
5
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF444/445
900
900
6.5
30
208
0.60
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
RF OPERATION 1-15MHz
(
)
POWER MOS IV
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-4906 Rev D
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 300V
f = 1 MHz
MIN
TYP
MAX
1500
1800
90
130
28
50
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
MIN
TYP
MAX
17
18.7
83
UNIT
dB
%
Test Conditions
V
DD
= 300V
V
GS
= 0V
P
out
= 300W
f = 13.56MHz
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 30:1
ARF444/445
1
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL 13.56 MHz, 1000 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT
Parts List
R1-R16 = 4.7
1W
C1 = 200pF Chip Capacitor
C2-C6 = 0.1
F Disk Ceramic
C7, C8 = 0.01 Disk Ceramic
Q1, Q3 = ARF444
Q2, Q4 = ARF445
L1, L2 = 0.37
H: 6T, #18AWG, ID=0.438
RFC1 = 2T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shield bead,
i=850
T1 = 9:1 (Z) conventional transformer; 3:1 (T), #18 stranded PTFE coated wire on two Fair-Rite #2643540002,
i=850
T2 = 1:1 (Z) conventional transformer; 2:2 (T), #14 stranded PTFE coated wire on two stacks of three
Fair-Rite #2643102002 shielded bead,
i=850
BFC1 = 6T, #18 Twisted pair stranded PTFE coated wire on three stacked Indiana General Toroid #F624-19-Q1
i=125
L2
L1
RFC1
J1
RF INPUT
J2
RF OUTPUT
J3
300VDC
Q1
T1
BFC1
T2
C1
C6
C7
Q2
Q3
Q4
C2
C3
C4
C5
R1-R4
R5-R8
R9-R12
R13-R16
C8
Circuit Characteristics
P
out
= 1000W
Gain = 16.5dB
Efficiency = 80%
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
Figure 2, RF Power Out vs RF Power In
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (
C)
Figure 2, Typical Transfer Characteristics
Figure 3, Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 4, Maximum DC Safe Operating Area
Figure 5, Breakdown Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
C, CAPACITANCE (pF)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
RF POWER OUT (WATTS)
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
V
GS
(TH), THRESHOLD VOLTAGE
VOLTAGE (NORMALIZED)
(NORMALIZED)
0
10
20
30
40
0
2
4
6
8
-50
-25
0
25
50
75
100 125 150
1
5
10
50 100
1000
-50
-25
0
25
50
75
100 125 150
.01
.05
.1
.5
1
5
10
50
100
300
ARF444/445
VDS = 30V
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
= V
GS
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
Operation Here
Limited By R
DS
(ON)
TC = +25
C
TJ = +150
C
1200
800
400
0
16
12
8
4
0
10
5
1
.5
.1
5,000
1,000
500
100
50
10
Duty Cycle
= 50%
TJ = -55
C
TJ = +25
C
TJ = +125
C
TJ = -55
C
TJ = +25
C
TJ = +125
C
Crss
Ciss
Coss
Performance of aTypical
Push-Pull Power Amplifier (4-Devices)
f = 13.56 MHz
V
DD
= 300V
V
GS
= 0V
Continuous Wave
050-4906 Rev D
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
Source
ARF44O
SOURCE
GATE
DRAIN
3.55 (.138)
3.81 (.150)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
SOURCE
DRAIN
GATE
Dimensions in Millimeters and (Inches)
Source
ARF44E
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
ARF444/445
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
TO-247AD Package Outline
NOTE: The ARF444 and ARF445 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
ARF445
ARF444
050-4906 Rev D
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388 -0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
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