050-4909 Rev C 7-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage
1
(I
D
(ON) = 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
450
4
25
250
100
3
5.8
2
5
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF449A/449B
450
450
9
30
165
0.76
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
90W
120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
Specified 150 Volt, 81.36 MHz Characteristics:
Output Power = 90 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
TO-247
ARF449A
ARF449B
G
D
S
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-4909 Rev C 7-2003
DYNAMIC CHARACTERISTICS
ARF449A/449B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25C
R
G
= 1.6
MIN
TYP
MAX
980
1200
87
120
25
40
5
10
3.1
7
15
25
3
7
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
Test Conditions
f = 81.36 MHz
V
GS
= 0V V
DD
= 150V
P
out
= 90W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1
MIN
TYP
MAX
12
13
70
75
UNIT
dB
%
1
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
5
10
50 100
500
GAIN (dB)
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
30
25
20
15
10
5
0
30
45
60
75
90
105
120
Class C
V
DD
= 150V
P
out
= 150W
16
12
8
4
0
0
2
4
6
8
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
3000
1000
500
100
50
10
1
5
10
50
150
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55C
TJ = -55C
TJ = +125C
TJ = +25C
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
50
10
5
1
.5
.1
10S
1mS
10mS
100mS
DC
100S
050-4909 Rev C 7-2003
Freq. (MHz)
Z
in
-
gate shunted by 25
Z
OL
-
conjugate of optimum load impedance for 150W at 150V
Z
in
(
)
Z
OL
(
)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
0.35
+
j 1.1
0.56
+
j 2.5
0.90
+
j 3.8
G
PS
, COMMON SOURCE AMPLIFIER GAIN
(dB)
P
OUT
, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
14
12
10
8
6
0
40
80
120
160
T
C
, CASE TEMPERATURE (C)
Figure 5, Typical Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
160
120
80
40
0
0
2
4
6
8
10
25
20
15
10
5
0
1
5
10
15
20
25
30
P
IN
, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
P
OUT
, POWER OUT (WATTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
ARF449A/449B
5.5V
4.5V
5V
6V
VGS=8, 10 & 15V
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.8
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Class C
V
DD
= 150V
f = 81.36 MHz
Table 1 - Typical Class C Large Signal Input-Output Impedance
Class C
V
DD
= 150V
f = 81.36 MHz
6.5V
050-4909 Rev C 7-2003
L1
C2
T1
R1
DUT
L2
L3
L4
C3
C6
C7
C5
L5
150V
+
-
RF Output
RF Input
C1 -- 680pF Unelco
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 0.8" #18 AWG into hairpin ~19nH
L2-L3 -- 3t #18 AWG .25" ID ~50nH
L4 -- 10t #18 AWG .25" ID ~470nH
L5 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 4:1 Broadband Transformer
81.36 MHz Test Circuit
C1
C4
Parts List
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Source
2-Plcs.
Top View
ARF449A
Device
ARF449B
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
ARF449A/449B
81.36 MHz Test Circuit
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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