Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
DESCRIPTION:
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
22
A
P
DISS
Power Dissipation
875
W
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +150
C
Thermal Data
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
0.20
C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
350 W (typ.) IFF 1030 1090 MHz
300 W (min.) DME 1025 1150 MHz
290 W (typ.) TACAN 960 1215 MHz
960 1215 MHz
GOLD METALLIZATION
P
OUT
= 300W MINIMUM
G
P
= 6.3 dB MINIMUM
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
EMITTER BALLASTED
COMMON BASE
The MS2422 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2422 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
C)
C)
STATIC
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 10 mA I
E
= 0 mA
65
---
---
V
BV
CES
I
C
= 25 mA V
BE
= 0 V
65
---
---
V
BV
EBO
I
E
= 5.0 mA I
C
= 0 mA
3.5
---
---
V
I
CES
V
CE
= 50 V I
E
= 0 mA
---
---
25
mA
h
FE
V
CE
= 5 V I
C
= 1A
10
---
---
mA
DYNAMI
DYNAMICC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f = 1025 - 1150 MHz P
IN
= 70W V
CE
= 50V
300
---
---
W
G
P
f = 1025 - 1150 MHz P
IN
= 70W V
CE
= 50V
6.3
---
---
dB
C
f = 1025 - 1150 MHz P
IN
= 70W V
CE
= 50V
35
---
---
%
Conditions
Pulse Width = 10
s Duty Cycle = 1%
IMPEDANCE DATA
IMPEDANCE DATA
FREQ
Z
IN
(
)
)
Z
CL
(
)
)
960 MHz
5.1 + j1.0
2.2 j3.5
1090 MHz
4.2 + j0.5
2.5 j3.5
1215 MHz
7.5 + j1.5
2.3 j1.5
Pin = 70W Vce = 50V
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
TYPICAL PER
TYPICAL PERFORMANCE
FORMANCE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
TEST CIRCUIT
TEST CIRCUIT
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
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