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Электронный компонент: ATF-10236

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5-26
0.5 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
0.8 dB Typical at 4 GHz
Low Bias:
V
DS
= 2 V, I
DS
= 20 mA
High Associated Gain:
13.0 dB Typical at 4 GHz
High Output Power: 20.0 dBm
Typical P
1dB
at 4 GHz
Cost Effective Ceramic
Microstrip Package
Tape-And-Reel Packaging
Option Available
[1]
ATF-10236
36 micro-X Package
Description
The ATF-10236 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12 GHz frequency
range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
Electrical Specifications, T
A
= 25
C
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
NF
O
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
f = 2.0 GHz
dB
0.6
f = 4.0 GHz
dB
0.8
1.0
f = 6.0 GHz
dB
1.0
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
f = 2.0 GHz
dB
16.5
f = 4.0 GHz
dB
12.0
13.0
f = 6.0 GHz
dB
10.5
P
1 dB
Power Output @ 1 dB Gain Compression
f = 4.0 GHz
dBm
20.0
V
DS
= 4 V, I
DS
= 70 mA
G
1 dB
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
f = 4.0 GHz
dB
12.0
g
m
Transconductance: V
DS
= 2 V, V
GS
= 0 V
mmho
80
140
I
DSS
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
mA
70
130
180
V
P
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
V
-3.0
-1.3
-0.8
Note:
1. Refer to PACKAGING section, "Tape-and-Reel Packaging for Surface Mount Semiconductors."
5965-8697E
5-27
ATF-10236 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
DS
Drain-Source Voltage
V
+5
V
GS
Gate-Source Voltage
V
-4
V
GD
Gate-Drain Voltage
V
-7
I
DS
Drain Current
mA
I
DSS
P
T
Power Dissipation
[2,3]
mW
430
T
CH
Channel Temperature
C
175
T
STG
Storage Temperature
[4]
C
175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
C.
3. Derate at 2.9 mW/
C for
T
CASE
> 25
C.
4. Storage above +150
C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175
C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-10236 Typical Performance, T
A
= 25
C
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10236-TR1
1000
7"
ATF-10236-STR
10
STRIP
For more information, see "Tape and Reel Packaging for Semiconductor Devices."
Thermal Resistance :
jc
= 350
C/W; T
CH
= 150
C
Liquid Crystal Measurement:
1
m Spot Size
[5]
ATF-10236 Noise Parameters:
V
DS
= 2 V, I
DS
= 25 mA
Freq.
NF
O
opt
GHz
dB
Mag
Ang
R
N
/50
0.5
0.45
0.93
18
0.75
1.0
0.5
0.87
36
0.63
2.0
0.6
0.73
74
0.33
4.0
0.8
0.45
148
0.15
6.0
1.0
0.42
-137
0.12
8.0
1.3
0.49
-80
0.45
FREQUENCY (GHz)
NF
O
(dB)
I
DS
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS
.
V
DS
= 2V, f = 4.0 GHz.
NF
O
(dB)
0
20
10
40
50
30
60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 25 mA.
FREQUENCY (GHz)
GAIN (dB)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
16
14
12
10
G
A
(dB)
2.0
6.0
4.0
8.0 10.0 12.0
1.5
1.0
0.5
0
G
A
G
A
NF
O
NF
O
|S
21
|
2
MSG
MAG
0.5
1.0
2.0
4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2V, I
DS
= 25 mA, T
A
= 25
C.
5-28
Typical Scattering Parameters,
Common Source, Z
O
= 50
, T
A
= 25
C, V
DS
= 2 V, I
DS
= 25 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.5
.97
-20
15.1
5.68
162
-32.8
.023
76
.47
-11
1.0
.93
-41
14.9
5.58
143
-26.0
.050
71
.45
-23
2.0
.77
-81
13.6
4.76
107
-21.3
.086
51
.36
-38
3.0
.59
-114
12.2
4.06
80
-18.4
.120
35
.30
-51
4.0
.48
-148
10.9
3.51
52
-16.5
.149
18
.23
-67
5.0
.46
166
9.6
3.03
26
-15.3
.172
3
.10
-67
6.0
.53
125
8.5
2.65
1
-14.5
.189
-14
.09
48
7.0
.62
96
6.9
2.22
-20
-14.4
.191
-28
.24
55
8.0
.71
73
4.9
1.75
-39
-14.5
.189
-41
.37
51
9.0
.75
54
3.3
1.47
-55
-14.7
.184
-46
.46
42
10.0
.78
39
2.1
1.28
-72
-14.9
.180
-59
.51
34
11.0
.82
26
0.3
1.04
-86
-14.9
.179
-71
.54
26
12.0
.84
12
-0.5
0.95
-101
-15.0
.177
-82
.54
17
A model for this device is available in the DEVICE MODELS section.
1
3
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085)
2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57
0.25
0.180
0.010
0.15
0.05
(0.006
0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx =
0.005
mm .xx =
0.13
0.56
(0.022)
1.45
0.25
(0.057
0.010)
36 micro-X Package Dimensions
102