Document Outline
- List of Figures
- 1. Power Output @ dB Gain Compression and 1 dB Compressed Gain vs. Frequency. V DS = 9V, I DS = 250 mA.
- 2. Output Power and Power Added Efficiency vs. Input Power. V DS = 9 V, I DS = 250 mA, f = 4.0 GHz.
- 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V DS = 9 V, I DS = 250 mA.
- Features
- Description
- Electrical Specifications, TA = 25C
- 100 mil Flange Package
- ATF-45101 Absolute Maximum Ratings
- ATF-45101 Typical Performance, TA = 25C
- Typical Scattering Parameters, Common Emitter, ZO = 50 W, TA =25C, VDS =9 V, I DS =250 mA
- 100 mil Flange Package Dimensions
5-92
2 8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-45101
100 mil Flange Package
Features
High Output Power:
29.0 dBm Typical P
1 dB
at 4 GHz
High Gain at 1dB
Compression:
10.0 dB Typical G
1 dB
at 4 GHz
High Power Efficiency:
38% Typical at 4 GHz
Hermetic Metal-Ceramic
Stripline Package
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
Electrical Specifications, T
A
= 25
C
P
1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
28.0
29.0
V
DS
= 9 V, I
DS
= 250 mA
f = 8.0 GHz
28.0
G
1 dB
1 dB Compressed Gain: V
DS
= 9 V, I
DS
= 250 mA
f = 4.0 GHz
dB
9.0
10.0
f = 8.0 GHz
4.0
add
Efficiency @ P
1dB
: V
DS
= 9 V, I
DS
= 250 mA
f = 4.0 GHz
%
38
g
m
Transconductance: V
DS
= 2.5 V, I
DS
= 250 mA
mmho
200
I
DSS
Saturated Drain Current: V
DS
= 1.75 V, V
GS
= 0 V
mA
400
600
800
V
P
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 12.5 mA
V
-5.4
-4.0
-2.0
Description
The ATF-45101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 8 GHz frequency
range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
5965-8736E
5-93
ATF-45101 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
DS
Drain-Source Voltage
V
+14
V
GS
Gate-Source Voltage
V
-7
V
GD
Gate-Drain Voltage
V
-16
I
DS
Drain Current
mA
I
DSS
P
T
Power Dissipation
[2,3]
W
3.6
T
CH
Channel Temperature
C
175
T
STG
Storage Temperature
C
-65 to +175
Thermal Resistance:
jc
= 42
C/W; T
CH
= 150
C
Liquid Crystal Measurement:
1
m Spot Size
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
C.
3. Derate at 24 mW/
C for
T
CASE
> 24
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-45101 Typical Performance, T
A
= 25
C
FREQUENCY (GHz)
P
1 dB
(dBm)
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
V
DS
= 9V, I
DS
= 250 mA.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 9 V, I
DS
= 250 mA.
FREQUENCY (GHz)
GAIN (dB)
20
15
10
5
0
30
29
28
27
26
G
1 dB
(dBm)
2.0
6.0
4.0
8.0 10.0 12.0
P
1 dB
G
1 dB
|S
21
|
2
MSG
MAG
1.0
2.0
4.0
6.0
14.0
10.0
25
20
15
10
5
0
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
V
DS
= 9 V, I
DS
= 250 mA, f = 4.0 GHz.
P
IN
(dBm)
P
OUT
(dBm)
add
(%)
0
5
10
15
20
25
30
35
30
25
20
15
10
5
0
40
30
20
10
0
5-94
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
DS
= 9 V, I
DS
= 250 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
1.0
.89
-88
14.9
5.54
119
-26.2
.049
43
.31
-63
2.0
.83
-135
10.8
3.48
82
-26.0
.050
18
.33
-108
3.0
.81
-158
7.6
2.40
58
-25.8
.051
7
.39
-129
4.0
.84
-174
5.4
1.86
38
-25.5
.053
3
.46
-144
5.0
.82
-170
3.8
1.55
18
-25.2
.055
-2
.50
-154
6.0
.81
152
2.6
1.36
-2
-24.4
.060
-8
.52
-168
7.0
.81
133
1.2
1.15
-25
-23.9
.064
-15
.55
173
8.0
.81
122
-0.3
.97
-42
-23.5
.067
-20
.59
154
9.0
.80
113
-1.8
.81
-60
-22.6
.074
-31
.64
137
10.0
.79
107
-3.2
.69
-73
-22.0
.079
-40
.68
123
11.0
.77
94
-4.6
.59
-91
-21.5
.084
-45
.72
113
12.0
.73
82
-5.8
.51
-106
-20.3
.097
-55
.76
99
13.0
.68
69
-6.7
.46
-123
-18.3
.121
-63
.78
89
14.0
.64
56
-7.1
.44
-137
-15.9
.161
-79
.80
79
A model for this device is available in the DEVICE MODELS section.
100 mil Flange Package Dimensions
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
1
3
R, TYP
4
2
SOURCE
SOURCE
DRAIN
GATE
.12
3.0
.100
2.54
.300 min
.03
0.8
.06
1.6
.044
1.12
.265
6.73
.062 DIA.
1.57 (2) PLCS
.05
1.3
0.025
0.003 mils
0.64
0.08 mm
.42
10.7
.004
.002
.10
.05
Package marking code is 451
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