Document Outline
- List of Figures
- 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain vs. Frequency
- 2. Output Power and Power Added Efficiency vs. Input Power
- 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency
- Features
- Description
- Electrical Specifications, TA = 25C
- 70 mil Flange Package
- ATF-45171 Absolute Maximum Ratings
- ATF-45171 Typical Performance, TA = 25C
- Typical Scattering Parameters, Common Emitter, ZO = 50 W, TA =25C, VDS =9 V, IDS = 250 mA
- 70 mil Flange Package Dimensions
5-95
2 8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-45171
70 mil Flange Package
Features
High Output Power:
29.0 dBm Typical P
1 dB
at 4 GHz
High Gain at 1dB
Compression:
10.5 dB Typical G
1 dB
at 4 GHz
High Power Efficiency:
38% Typical at 4 GHz
Hermetic Metal-Ceramic
Stripline Package
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
Electrical Specifications, T
A
= 25
C
P
1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
28.0
29.0
V
DS
= 9 V, I
DS
= 250 mA
f = 8.0 GHz
28.0
G
1 dB
1 dB Compressed Gain: V
DS
= 9 V, I
DS
= 250 mA
f = 4.0 GHz
dB
9.5
10.5
f = 8.0 GHz
4.5
add
Efficiency @ P
1 dB
: V
DS
= 9 V, I
DS
= 250 mA
f = 4.0 GHz
%
38
g
m
Transconductance: V
DS
= 2.5 V, I
DS
= 250 mA
mmho
200
I
DSS
Saturated Drain Current: V
DS
= 1.75 V, V
GS
= 0 V
mA
400
600
800
V
P
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
=12.5 mA
V
-5.4
-4.0
-2.0
Description
The ATF-45171 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 8 GHz frequency
range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
5965-8734E
5-96
ATF-45171 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
DS
Drain-Source Voltage
V
+14
V
GS
Gate-Source Voltage
V
-7
V
GD
Gate-Drain Voltage
V
-16
I
DS
Drain Current
mA
I
DSS
P
T
Power Dissipation
[2,3]
W
3.6
T
CH
Channel Temperature
C
175
T
STG
Storage Temperature
C
-65 to +175
Thermal Resistance:
jc
= 42
C/W; T
CH
= 150
C
Liquid Crystal Measurement:
1
m Spot Size
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
C.
3. Derate at 24 mW/
C for
T
CASE
> 24
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-45171 Typical Performance, T
A
= 25
C
FREQUENCY (GHz)
P
1 dB
(dBm)
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
V
DS
= 9V, I
DS
= 250 mA.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 9 V, I
DS
= 250 mA.
FREQUENCY (GHz)
GAIN (dB)
20
15
10
5
0
30
29
28
27
26
G
1 dB
(dBm)
2.0
6.0
4.0
8.0 10.0 12.0
P
1 dB
G
1 dB
|S
21
|
2
MSG
MSG
MAG
1.0
2.0
4.0
6.0
14.0
10.0
25
20
15
10
5
0
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
V
DS
= 9 V, I
DS
= 250 mA, f = 4.0 GHz.
P
IN
(dBm)
P
OUT
(dBm)
add
(%)
0
5
10
15
20
25
30
35
30
25
20
15
10
5
0
40
30
20
10
0
5-97
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
C, V
DS
= 9 V, I
DS
= 250 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
1.0
.91
-83
14.5
5.30
122
-26.7
.046
46
.37
-46
2.0
.83
-137
10.8
3.45
83
-26.4
.048
19
.26
-91
3.0
.83
-167
7.4
2.34
54
-26.0
.050
5
.31
-131
4.0
.86
174
4.4
1.66
32
-25.5
.053
2
.43
-155
5.0
.86
162
2.1
1.28
12
-25.1
.055
0
.52
-167
6.0
.85
152
0.7
1.09
-3
-24.7
.058
-2
.56
-176
7.0
.84
138
0.1
1.01
-22
-24.4
.060
-6
.59
173
8.0
.84
124
-0.9
.90
-40
-23.8
.064
-13
.62
154
9.0
.85
114
-2.5
.75
-59
-23.4
.068
-19
.66
135
10.0
.85
106
-4.3
.61
-70
-22.5
.075
-25
.71
123
11.0
.85
100
-5.2
.55
-81
-21.6
.083
-30
.76
119
12.0
.83
95
-6.2
.49
-90
-20.8
.091
-39
.79
111
13.0
.80
76
-6.7
.46
-107
-19.3
.109
-50
.81
98
14.0
.77
59
-8.0
.40
-125
-18.9
.113
-61
.83
78
A model for this device is available in the DEVICE MODELS section.
.08
2.0
.02
.50
.24
6.0
.003
.002
.08
.05
.070
1.78
.034
.86
.05
1.3
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
0.005
mm .xx =
0.13
mm
1
3
4
2
SOURCE
SOURCE
DRAIN
GATE
.26
6.7
.015
.381
.270 MIN
6.86 MIN
70 mil Flange Package Dimensions
Package marking code is 451
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