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Электронный компонент: MSA-0300

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6-290
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
Cascadable 50
Gain Block
3 dB Bandwidth:
DC to 2.8 GHz
12.0 dB Typical Gain at
1.0 GHz
10.0 dBm Typical P
1 dB
at
1.0 GHz
MSA-0300
Chip Outline
[1]
Description
The MSA-0300 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section "Silicon MMIC Chip Use" for
additional information.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
C and either wedge
or ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS
section, "Chip Use".
5965-9565E
6-291
MSA-0300 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
80 mA
Power Dissipation
[2,3]
425 mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
65 to 200
C
Thermal Resistance
[2,4]
:
jc
= 45
C/W
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0300-GP4
100
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
12.5
G
P
Gain Flatness
f = 0.1 to 1.8 GHz
dB
0.6
f
3 dB
3 dB Bandwidth
GHz
2.8
Input VSWR
f = 0.1 to 3.0 GHz
1.8:1
Output VSWR
f = 0.1 to 3.0 GHz
1.8:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.0
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
4.5
5.0
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/
C
8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 35 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
C.
3. Derate at 22.2 mW/
C for T
C
> 181
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods. See MEASURE-
MENTS section "Thermal Resistance" for more information.
6-292
MSA-0300 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
C, I
d
= 35 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.13
179
12.6
4.28
177
18.6
.118
2
.09
13
1.21
0.2
.13
179
12.6
4.27
172
18.3
.121
3
.10
27
1.19
0.4
.12
179
12.5
4.24
165
18.3
.121
5
.12
48
1.19
0.6
.11
177
12.5
4.22
158
18.2
.123
8
.14
65
1.18
0.8
.11
172
12.4
4.19
152
17.8
.129
11
.17
76
1.15
1.0
.10
166
12.4
4.15
144
17.7
.130
1
.20
85
1.14
1.5
.11
145
12.0
4.00
126
17.1
.139
1
.24
104
1.09
2.0
.16
140
11.5
3.76
109
16.2
.154
2
.27
122
1.03
2.5
.23
141
10.8
3.47
97
15.6
.166
2
.28
133
0.99
3.0
.29
149
9.8
3.10
82
15.2
.173
24
.28
145
0.99
3.5
.35
157
8.7
2.72
67
14.5
.188
21
.27
148
0.97
4.0
.38
164
7.6
2.40
55
14.3
.193
22
.25
146
1.00
5.0
.41
179
5.5
1.88
35
13.7
.206
17
.21
134
1.14
6.0
.43
153
3.6
1.51
18
13.3
.217
14
.21
137
1.27
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
Typical Performance, T
A
= 25
C
(unless otherwise noted)
S
11
S
21
S
12
S
22
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
C, I
d
= 35 mA.
I
d
(mA)
Figure 2. Power Gain vs. Current.
4
6
8
10
12
14
0
2
4
6
8
10
12
14
G
p
(dB)
15
25
30
40
50
35
20
Gain Flat to DC
4
5
6
7
8
9
10
11
11
12
13
55
25
+25
+85
+125
P
1 dB
(dBm)
NF (dB)
G
p
(dB)
TEMPERATURE (
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 35 mA.
NF
G
P
P
1 dB
5.5
5.0
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
I
d
= 50 mA
I
d
= 20 mA
I
d
= 35 mA
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6-293
MSA-0300 Chip Dimensions
NOT APPLICABLE
INPUT
GROUND
OPTIONAL
OUTPUT
[1]
365
m
14.4 mil
365
m
14.4 mil
Unless otherwise specified, tolerances are
13
m /
0.5 mils. Chip thickness is 5.5
0.5 mils.
Bond Pads are 41
m / 1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.