ChipFind - документация

Электронный компонент: MSA-1100

Скачать:  PDF   ZIP

Document Outline

6-450
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
High Dynamic Range
Cascadable 50
or 75
Gain Block
3 dB Bandwidth:
50 MHz to 1.6 GHz
17.5 dBm Typical P
1dB
at
0.5 GHz
12 dB Typical 50
Gain at
0.5 GHz
3.5 dB Typical Noise Figure
at 0.5 GHz
MSA-1100
Chip Outline
[1]
Description
The MSA-1100 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for high dynamic range
in either 50 or 75
systems by
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a
200 pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.
[1]
C
block
C
block
C
Fbk
R
bias
(Required)
V
CC
8 V
V
d
= 5.5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
Typical Biasing Configuration
Note:
1. Refer to the APPLICATIONS section
"Silicon MMIC Chip Use" for additional
information.
combining low noise figure with
high IP
3
. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
C and either wedge
or ball bonding using 0.7 mil gold
wire.
5965-9555E
5
3
1
4
2
AK
6-451
MSA-1100 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
100 mA
Power Dissipation
[2,3]
650 mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
65 to 200
C
Thermal Resistance
[2,4]
:
jc
[2]
= 57
C/W
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-1100-GP4
100
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
12.5
G
P
Gain Flatness
f = 0.1 to 1.0 GHz
dB
0.7
f
3 dB
3 dB Bandwidth
[3]
GHz
1.6
Input VSWR
f = 0.1 to 1.0 GHz
1.7:1
Output VSWR
f = 0.1 to 1.0 GHz
1.9:1
NF
50
Noise Figure
f = 0.5 GHz
dB
3.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
17.5
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
30.0
t
D
Group Delay
f = 0.5 GHz
psec
125
V
d
Device Voltage
V
4.5
5.5
6.5
dV/dT
Device Voltage Temperature Coefficient
mV/
C
8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. Referenced from 0.05 GHz gain (G
P
).
Electrical Specifications
[1]
, T
A
= 25
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 60 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
C.
3. Derate at 17.5 mW/
C for T
Mounting Surface
> 163
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods.
6-452
MSA-1100 Typical Scattering Parameters
[1,2]
(T
A
= 25
C, I
d
= 60 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.001
.72
26
19.3
9.23
168
23.4
.067
46
.72
27
.52
0.005
.19
73
14.1
5.09
165
16.7
.147
11
.19
77
.96
0.010
.16
69
13.9
4.97
168
16.6
.148
9
.16
79
.99
0.050
.04
59
12.8
4.39
175
16.0
.159
3
.04
102
1.06
0.100
.05
66
12.8
4.38
175
16.0
.158
2
.05
100
1.06
0.200
.07
78
12.8
4.36
170
15.9
.161
4
.08
100
1.05
0.400
.14
92
12.7
4.31
162
15.6
.165
7
.14
105
1.01
0.600
.19
102
12.5
4.22
153
15.3
.171
10
.21
111
.96
0.800
.25
110
12.3
4.11
144
14.9
.180
13
.27
116
.90
1.000
.31
117
12.0
4.00
137
14.4
.190
14
.33
122
.83
1.500
.40
132
10.9
3.52
117
13.4
.214
15
.42
136
.70
2.000
.47
145
9.6
3.01
100
12.6
.235
14
.46
148
.64
2.500
.50
150
8.3
2.60
89
12.0
.251
16
.45
152
.63
3.000
.52
158
7.0
2.23
77
11.6
.263
17
.42
156
.66
3.500
.51
164
5.7
1.92
68
11.1
.278
19
.38
155
.73
4.000
.50
169
4.6
1.70
61
10.5
.297
22
.34
152
.79
Notes:
1. S-parameters are de-embedded from 200 mil BeO package measured data using the package model found in the
DEVICE MODELS section.
2. S-parameter data assumes an external 200 pF capacitor. Low frequency performance can be extended using a larger
valued capacitor.
S
11
S
21
S
12
S
22
6-453
MSA-1100 Bonding Diagram
MSA
Die
5
1
4
2
3
A11
Input Trace
Numbers refer to pin contacts listed on the Chip Outline.
Capacitor
(200 pF typ)
Ground
Ground
Output
Trace
(backside
contact)
G
p
(dB)
.05
.02
.1
.3
.5 1.0 2.0 3.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 60 mA.
40
20
60
80
I
d
(mA)
Figure 2. Power Gain vs. Current.
0
3
6
9
12
15
18
21
24
4
6
8
12
10
14
Open Loop
Closed Loop
G
p
(dB)
0.1 GHz
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, I
d
= 60 mA.
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression and Noise Figure vs.
Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
16
14
12
22
20
18
P
1 dB
(dBm)
I
d
= 40 mA
3
4
5
11
12
13
16
17
18
25
55
+25
+85
+125
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (
C)
3.0
4.0
5.0
NF (dB)
0.5 GHz
I
d
= 60 mA
I
d
= 75 mA
2.0 GHz
1.0 GHz,
1.0 GHz
P
1 dB
G
P
NF
Typical Performance, T
A
= 25
C
(Unless otherwise noted, performance is for a MSA-1100 used with an external 200 pF capacitor. See bonding diagram.)
MSA-1100 Chip Dimensions
5
3
1
4
2
495
m
19.5 mil
(1) Input
(3) Output
(Backside Contact)
(4) Optional
Topside
Output*
Unless otherwise specified, tolerances are
13
m /
0.5 mils.
Chip thickness is 114
m / 4.5 mil. Bond Pads are 41
m / 1.6 mil
typical on each side.
* Output contact is made by die attaching the backside of the die.
AK
335
m
13.2 mil
(2) Ground
Bondpad
for Feedback
Capacitor
(5)