ADVANCE INFORMATION

This Data Sheet states AMD's current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 25270

Rev: A Amendment/0

Issue Date: October 3, 2001

Refer to AMD's Website (www.amd.com) for the latest information.

Am29LV128M

128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit

3.0 Volt-only

Uniform Sector Flash Memory with VersatileI/O

Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

Single power supply operation

-- 3 volt read, erase, and program operations

Enhanced VersatileI/O

control

-- Device generates data output voltages and tolerates

data input voltages as determined by the voltage on
the V

pin; operates from 1.65 to 3.6 V

Manufactured on 0.23 µm MirrorBit process
technology

SecSi

(Secured Silicon) Sector region

-- 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence

-- May be programmed and locked at the factory or by

the customer

Flexible sector architecture

-- Two hundred fifty-six 32 Kword (64 Kbyte) sectors

Compatibility with JEDEC standards

-- Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent
write protection

Minimum 100,000 erase cycle guarantee per sector

20-year data retention at 125

PERFORMANCE CHARACTERISTICS

High performance

-- 90 ns access time

-- 25 ns page read times

-- 0.4 s typical sector erase time

-- 5.9 µs typical write buffer word programming time:

16-word/32-byte write buffer reduces overall
programming time for multiple-word updates

-- 4-word/8-byte page read buffer

-- 16-word/32-byte write buffer

Low power consumption (typical values at 3.0 V, 5
MHz)

-- 30 mA typical active read current

-- 50 mA typical erase/program current

-- 1 µA typical standby mode current

Package options

-- 56-pin TSOP

-- 64-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES

Software features

-- Program Suspend & Resume: read other sectors

before programming operation is completed

-- Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

-- Data# polling & toggle bits provide status

-- Unlock Bypass Program command reduces overall

multiple-word or byte programming time

-- CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash
devices

Hardware features

-- Sector Group Protection: hardware-level method of

preventing write operations within a sector group

-- Temporary Sector Unprotect: V

-level method of

changing code in locked sectors

-- WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings

-- Hardware reset input (RESET#) resets device

-- Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

Am29LV128M

A D V A N C E I N F O R M A T I O N

GENERAL DESCRIPTION

The Am29LV128M is a 128 Mbit, 3.0 volt single power
supply flash memory devices organized as 8,388,608
words or 16,777,216 bytes. The device has a 16-bit
wide data bus that can also function as an 8-bit wide
data bus by using the BYTE# input. The device can be
programmed either in the host system or in standard
EPROM programmers.

An access time of 90, 100, 110, or 120 ns is available.
Note that each device has a specific operating voltage
range (V

) and an I/O voltage range (V

), as speci-

fied in the

Product Selector Guide

and the

Ordering In-

formation

sections. The device is offered in a 56-pin

TSOP or Fortified BGA package. Each device has
separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.

Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V

input, a high-voltage accelerated program

(WP#/ACC) input provides shorter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.

The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.

The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.

Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to deter-
mine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.

The VersatileI/OTM (V

) control allows the host sys-

tem to set the voltage levels that the device generates

at its data outputs and the voltages tolerated at its
data inputs to the same voltage level that is asserted
on the V

pin. This allows the device to operate in a

1.8 V or 3 V system environment as required.

Hardware data protection measures include a low
V

detector that automatically inhibits write opera-

tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.

The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a
given sector to read or program any other sector and
then complete the erase operation. The Program
Suspend/Program Resume feature enables the host
system to pause a program operation in a given sector
to read any other sector and then complete the pro-
gram operation.

The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.

T he device reduces power c ons umption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.

The SecSi

(Secured Silicon) Sector provides a

128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.

The Write Protect (WP#/ACC) feature protects the
first or last sector by asserting a logic low on the WP#
pin.

AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.

Am29LV128M

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

1
2
3
4
5
6
7
8
9

10
11
12
13
14
15
16
17
18
19
20
21
22

A22
A15
A14
A13
A12
A11
A10

A9
A8

A19
A20

WE#

RESET#

A21

WP#/ACC

RY/BY#

A18
A17

A7
A6
A5

56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35

NC
NC
A16
BYTE#
V

DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V

DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0

23
24
25
26
27
28

A4
A3
A2
A1

NC
NC

34
33
32
31
30
29

OE#
V

CE#
A0
NC
V

1
2
3
4
5
6
7
8
9

10
11
12
13
14
15
16
17
18
19
20
21
22

NC
A22
A15
A14

A13

A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5

56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35

NC
NC

A16

BYTE#

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

DQ11

DQ3

DQ10

DQ2
DQ9
DQ1
DQ8
DQ0

23
24
25
26
27
28

A4
A3

A1
NC
NC

34
33
32
31
30
29

OE#

CE#

NC
V

56-Pin Standard TSOP

56-Pin Reverse TSOP

Am29LV128M

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

Note: The FBGA package pinout configuration shown is preliminary. The ball count and package physical dimensions have not
yet been determined. Contact AMD for further information.

Special Handling Instructions for FBGA
Package

Special handling is required for Flash Memory products
in FBGA packages.

Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
T h e p a c k a g e a n d / o r d a t a i n t e g r i t y m a y b e
compromised if the package body is exposed to
temperatures above 150

C for prolonged periods of

time.

DQ15/A-1

BYTE#

A16

A15

A14

A12

A13

DQ13

DQ6

DQ14

DQ7

A11

A10

DQ4

DQ12

DQ5

A19

A21

RESET#

WE#

DQ11

DQ3

DQ10

DQ2

A20

A18

WP#/ACC

RY/BY#

DQ9

DQ1

DQ8

DQ0

A17

OE#

CE#

A22

Fortified BGA

Top View, Balls Facing Down

Am29LV128M

A D V A N C E I N F O R M A T I O N

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:

Valid Combinations

Valid Combinations list configurations planned to be supported in vol-
ume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly re-
leased combinations.

Am29LV128M

90R

TEMPERATURE RANGE
I =

Industrial

(40

C to +85

PACKAGE TYPE
E

56-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 056)

56-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR056)

64-Ball Fortified Ball Grid Array (

BGA),

13 x 11 mm, 1.0 mm pitch (LAA064)

SPEED OPTION
See Product Selector Guide and Valid Combinations

SECTOR ARCHITECTURE AND SECTOR WRITE PROTECTION (WP# = V

)

Uniform sector device, highest address sector protected

Uniform sector device, lowest address sector protected

DEVICE NUMBER/DESCRIPTION
Am29LV128MH/L
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBit Uniform Sector Flash Memory with VersatileIO

Control

3.0 Volt-only Read, Program, and Erase

Valid Combinations for

TSOP Package

Speed(

ns)

Range

Am29LV128MH90R,
Am29LV128ML90R

EI,

3.03.6 V

Am29LV128MH101,
Am29LV128ML101

100

2.73.6 V

Am29LV128MH112,
Am29LV128ML112

110

1.653.6 V

Am29LV128MH120,
Am29LV128ML120

120

1.653.6 V

Valid Combinations for
Fortified BGA Package

Speed

(ns)

Range

Order Number

Package Marking

Am29LV128MH90R,
Am29LV128ML90R

PCI

L128MH90R,
L128ML90R

3.0

3.6 V

3.0

3.6 V

Am29LV128MH101,
Am29LV128ML101

L128MH01V,
L128ML01V

100

2.7

3.6 V

2.7

3.6 V

Am29LV128MH112,
Am29LV128ML112

L128MH11V,
L128ML11V

110

1.65

3.6 V

Am29LV128MH120,
Am29LV128ML120

L128MH12V,
L128ML12V

120

1.65

3.6 V

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: Am29LV128M

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: Am29LV128M