N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002
APM4420
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM4420
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 125C
Handling Code
TU : Tube
TR : Tape & Reel
APM4420 K :
APM4420
XXXXX
XXXXX - Date Code
Pin Description
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current Continuous
12.5
I
DM
Maximum Drain Current Pulsed
50
A
30V/12.5A, R
DS(ON)
=6m
(typ.) @ V
GS
=10V
R
DS(ON)
=10m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design for
Extremely Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems .
SO
-
8
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
N-Channel MOSFET
G
S
D
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002
APM4420
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
A
=25
C
2.5
P
D
Maximum Power Dissipation
T
A
=100
C
1.0
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
50
C/W
APM4420
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
D
=250
A
30
V
I
DSS
Zero Gate Voltage Drain
C
t
V
DS
=24V , V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250
A
1
3
V
I
GSS
Gate Leakage Current
V
GS
=
16
V, V
DS
=0V
100
nA
V
GS
=10V, I
D
=12.5A
6
9
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=4.5V, I
D
=7A
10
13
m
V
SD
a
Diode Forward Voltage
I
SD
=2.3A, V
GS
=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
28
36
Q
gs
Gate-Source Charge
8
Q
gd
Gate-Drain Charge
V
DS
=15V, I
D
=12.5A
V
GS
=5V,
5
nC
t
d(ON)
Turn-on Delay Time
13
20
T
r
Turn-on Rise Time
9
15
t
d(OFF)
Turn-off Delay Time
43
66
T
f
Turn-off Fall Time
V
DD
=15V, I
D
=1A,
V
GEN
=10V, R
G
=6
, RL=15
14
28
ns
C
iss
Input Capacitance
3200
C
oss
Output Capacitance
680
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
275
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
300
s, duty cycle
2
%
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings Cont.
(T
A
= 25
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002
APM4420
www.anpec.com.tw
3
0
10
20
30
40
50
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
-50
-25
0
25
50
75
100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
Typical Characteristics
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
V
GS
=5,6,7,8,9,10V
V
GS
=3V
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
T
J
=125
C
T
J
=25
C
T
J
=-55
C
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
V
GS(th)
-Thershold V
oltage (V)
(Normalized)
I
DS
=250
A
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
V
GS
=10V
V
GS
=4.5V
V
GS
=4V
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002
APM4420
www.anpec.com.tw
4
3
4
5
6
7
8
9
10
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0
10
20
30
40
50
60
70
80
90
0
2
4
6
8
10
0
5
10
15
20
25
30
0
1000
2000
3000
4000
5000
-50
-25
0
25
50
75
100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Typical Characteristics Cont.
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On-Resistance (
)
(Normalized)
T
j
-Junction Temperature (
C)
V
GS
=10V
I
DS
=12.5A
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (
)
Gate Voltage (V)
I
DS
=12.5A
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
Gate Charge
Q
G
-Total Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
V
DS
=15V
I
DS
= 12.5A
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002
APM4420
www.anpec.com.tw
5
10
-2
10
-1
10
0
10
1
10
2
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
50
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
T
J
=25
C
T
J
=150
C
Time (sec)
Single Pulse Power
Power (W)
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
Normalized Transient Thermal Transient Impedence, Junction to Ambient
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