Features
Frequency Range 2.4 GHz to 2.5 GHz
Supply Voltage 2.7V to 3.6V
32 dB Power Gain
23 dBm Linear Output Power for IEEE 802.11b Mode Operation
EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation
On-chip Power Detector with 20 dB Dynamic Range
Power-down Mode and Biasing Control
Input and Interstage Matching Fully On-chip
Low Profile Lead-free Plastic Package QFN16 (3
3
0.9 mm)
Applications
IEEE 802.11b DSSS WLAN
IEEE 802.11g OFDM WLAN
PC Cards, PCMCIA, Access Points
2.4 GHz ISM Band Application
1.
Description
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50
and
on-chip interstage matching minimizes the PCB board-space and allows simplified
integration with very few passive components. The on-chip power detector provides a
voltage linear to the output power, while the standby/bias control logic provides
power-saving and shutdown options. The PA is realized as a three stage PA with
internal interstage matching and an open-collector output structure.
The power amplifier is designed using Atmel's Silicon-Germanium (SiGe2) process
and provides excellent linearity and noise performance, high gain, and good power-
added efficiency.
High Gain
Power Amplifier
for 802.11b/g
WLAN Systems
ATR7032
Preliminary
Rev. 4846BWLAN04/05
2
4846BWLAN04/05
ATR7032 [Preliminary]
Figure 1-1.
Block Diagram
RF_IN
IC
GND_RF
V_PA1
15
14
13
10
9
16
8
Interstage
Matching
50
Input
Match
Voltage
Detector
Standby/
Bias
Circuitry
11
RF_OUT
RF_OUT
RF_OUT
RF_OUT
12
5
6
7
Interstage
Matching
1
2
3
4
Paddle
GND_RF
IC
V_PA2
NC
NC
ATR7032
VCTRL
VC
C
GND_
V
C
C
VD
ET
3
4846BWLAN04/05
ATR7032 [Preliminary]
2.
Pin Configuration
Figure 2-1.
Pinning QFN16
IC
V_PA2
NC
NC
IC
RF
_I
N
GND
V_
PA1
RF
_OUT
RF
_OUT
RF
_OUT
RF
_OUT
16 15 14 13
5 6 7 8
1
2
3
4
12
11
10
9
ATR7032
VCTRL
VCC
GND_VCC
VDET
Table 2-1.
Pin Description
Pin
Symbol
Function
1
VCTRL
Power-up/biasing control voltage
2
VCC
Supply voltage
3
GND_VCC
Ground
4
VDET
Power detector voltage
5
RF_OUT
RF output
6
RF_OUT
RF output
7
RF_OUT
RF output
8
RF_OUT
RF output
9
NC
Not connected
10
NC
Not connected
11
V_PA2
Supply voltage PA stage 2
12
IC
Internally connected, on-chip matching; must not be externally connected
13
V_PA1
Supply voltage PA stage 1
14
GND
Ground
15
RF_IN
RF input
16
IC
Internally connected, on-chip matching; must not be externally connected
Slug
Ground
4
4846BWLAN04/05
ATR7032 [Preliminary]
3.
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Test Conditions
Symbol
Value
Unit
Supply voltage
V
CC
TBD
V
Supply current
I
CC
600
mA
Junction temperature
T
j
150
C
Storage temperature
T
Stg
40 to +125
C
Input RF power
P
IN
12
dBm
Control voltage power
up/down and biasing
V
CONTR
0 to +3.0
V
ESD protection, all pins
EIA/JESD22-A114-B
V
ESD
500
V
Note:
1. The part may not survive all maximums applied simultaneously.
4.
Operating Range
Parameters
Symbol
Value
Unit
Supply voltage range
V
CC
2.7 to 3.6
V
Ambient temperature range
T
amb
40 to +85
C
Frequency range
f
2400 to 2500
MHz
5.
Electrical Characteristics
Test Conditions measured on Atmel's evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25C
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.0
Control voltage range
PA operating mode
V
CONTR
1
2
V
A
1.1
Power down mode
V
CONTR
0.2
A
1.2
Current consumption
Quiescent
I
CQ
90
mA
A
1.3
Power down mode
I
PD
10
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4846BWLAN04/05
ATR7032 [Preliminary]
6.
Electrical Characteristics Unmodulated Carrier
Test Conditions measured on Atmel's evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25C
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
2.0
Saturated output
power
For reference
P
SAT
28.5
dBm
A
2.1
P1dB output power
P1dB
27
dBm
A
2.2
Harmonic rejection
P
OUT
= 23 dBm
2fout
3fout
45
30
dBc
dBc
C
C
2.3
Small signal gain
I
CQ
, small signal
condition
GL
32
dB
A
2.4
Gain variation
I
CQ
, small signal
condition
2.4 to 2.5 GHz
40 to +85C
G
varfreq
G
vartemp
1
1.5
+1
+1.5
dB
dB
A
C
2.5
Reverse isolation
I
CQ
, small signal
condition
ISOr
40
dB
C
2.6
Input 50
VSWR
I
CQ
, small signal
condition
VSWR
IN
2:1
C
2.7
Output 50
VSWR
I
CQ
, small signal
condition, with
external matching
VSWR
OUT
2:1
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
7.
Electrical Characteristics 11 Mbps CCK Modulation
Test Conditions measured on Atmel's evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25C,
11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
3.0
Maximum linear
output power
ACPR1
33 dBc,
ACPR2
55 dBc
P
LIN
23
dBm
A
3.1
Linear power gain
P
OUT
= P
LIN
,
ACPR1
33 dBc,
ACPR2
55 dBc
GL
32
dB
A
3.2
Current consumption
P
OUT
= P
LIN
,
ACPR1
33 dBc,
ACPR2
55 dBc
I
CC
220
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
8.
Electrical Characteristics 54 Mbps OFDM Modulation
Test Conditions measured on Atmel's evaluation board (unless otherwise stated): V
CC
= 3.3V, Frequency = 2.45 GHz, T
amb
= 25C,
54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM
measurement result.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
4.0
Error vector
magnitude
P
OUT
= 19 dBm
EVM
2.0
%
A
4.1
Linear power gain
P
OUT
= 19 dBm
GL
32
dB
A
4.2
Current consumption
P
OUT
= 19 dBm
I
CC
150
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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