KSR-3032-000
1
SRA2211UF
PNP Silicon Transistor
2.10.1
1.300.1
1
0.
30~0.
40
1.
30 BSC
2
2.
0
0.
1
0.
11
0.
05
0.
70-
0.
15
3
0~0.
1
+0.
1
Descriptions
Switching application
Interface circuit and driver circuit application
Features
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
High packing density
Ordering
Information
Type NO. Marking Package Code
SRA2211UF DR SOT-323F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Equivalent Circuit
R
1
B(IN)
E(COMMON)
C(OUT)
R
1
= 10K
PIN Connections
1. Base
2. Emitter
3. Collector
KSR-3032-000
2
SRA2211UF
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150 C
Storage Temperature
T
STG
-55 150
C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0 -
-
-500
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0 -
-
-500
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA 120
-
-
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-10mA, I
B
=-0.5mA -
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5mA -
250
-
MHz
Input Resistance
R
1
-
-
10
-
K
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 2 V
CE(SAT)
- I
C
Fig. 1 h
FE
- I
C
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