KPT-0004-000
1
ST5870
Photo Transistor
Features
Lensed for high sensitivity
5mm(T-1
3
/
4
) all plastic mold type
High reliability and stable characteristics
Visible light cut-off type
With base terminal
Outline Dimensions unit :
mm
22.0 MIN
2.5 2.5
1.0 MIN
1.0 MIN
2
1
3
0.5
3
2
5.0
0.2
8.6
0.2
7.8
0.2
5.8
0.2
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1.
Base
2.Collector
3.Emitter
KPT-0004-000
2
ST5870
Absolute maximum ratings
Characteristic Symbol
Ratings
Unit
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Collector Voltage
V
ECO
6
V
Collector-Base Voltage
V
CBO
30 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
20
mA
Collector Power Dissipation
P
D
75
mW
Operating Temperature
T
opr
-2585
Storage Temperature
T
stg
-30100
*
1
Soldering Temperature
T
sol
260 for 5 seconds
*1. Keep the distance more than 2.0mm from PCB to the bottom of LED package
Electrical Characteristics
Characteristic Symbol
Test
Condition
Min
Typ
Max
Unit
Current Dark Current
I
CEO
V
CEO
=10V, E
e
=0 -
0.05
0.5
uA
*
3
Light Current
I
CEL
V
CE
=5V, E
e
1mW/
- 5 - mA
Current-Emitter Saturation Voltage
V
CE(sat)
I
C
=0.5, E
e
1mW/
-
0.18
-
V
Rise Time
t
r
10
Switching Time
Fall Time
t
f
V
CC
=2V, I
C
=1mA
R
1
=100
-
10
- us
Spectral Sensitivity
-
700 ~ 1000
nm
Peak Sensitivity Wavelength
P
- -
880
-
nm
Half angle
1/2
- -
35
- deg
*1. Tolerance = 30%
KPT-0004-000
3
ST5870
Characteristic Diagrams
Fig.4 I
CEO
Ta
Fig. 3 P
D
Ta
Fig. 2 I
CEL
- V
CE
Fig. 1 I
CEL
- E
e
P
o
we
r Di
ssi
pat
i
o
n
P
D
[mW]
Ambient Temperature Ta []
R
e
la
tiv
e
I
n
ten
s
ity
[
%
]
Wavelength
[nm]
Irradiance Ee [/]
Li
gh
t
Cu
rren
t
I
CE
L
[mA]
Fig. 5 Spectrum Sensitivity
Ambient Temperature Ta []
Co
l
l
e
ct
o
r
D
a
rk Curre
nt
I
CE
O
[
]
Fig. 6 Sensitivity Diagram
Collector-Emitter Voltage V
CE
[V]
Li
gh
t
Cu
rren
t
I
CE
L
[mA]
10
20
-10
-20
10
0
10
-9
40
60
10
-8
-7
10
-6
100
80
Ambient Temperature Ta []
Sensitivity Diagram
KPT-0004-000
4
ST5870
Characteristic Diagrams
Fig. 7 I
CEL
- Ee
Fig. 8 Spectrum Sensitivity
Irradiance Ee [/]
Li
gh
t
Cu
rren
t
I
CE
L
[mA]
Irradiance Ee [/]
Li
gh
t
Cu
rren
t
I
CE
L
[mA]
100K
200
0
100
5
10
20
15
200K
300
400
50K
500
R
BE=
300K
500K
Fig. 9 Switching Time Test Circuit
100
R2
R1
B
C
Vcc=2V
t
r
t
d
t
f
10 %
90%
Ic=2mA
1000
5000 10000
50 100
10
500
20
1
0.5
10
5
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