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Электронный компонент: STA723D

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KST-D001-001
1
STA723D
PNP Silicon Transistor
Description
General purpose amplifier
D-PAK for surface mount applications
Features
P
C
(Collector dissipation)=15W
Low speed switching applications
Complementary pair with STC722D
Ordering
Information
Type NO.
Marking
Package Code
STA723D
STA723
D-PAK
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
KST-D001-001
2
STA723D


Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-40
V
Collector-Emitter voltage
V
CEO
-30
V
Emitter-Base voltage
V
EBO
-5
V
Collector current
I
C
-3
A
Collector dissipation
P
C
15
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-50
A, I
B
=0
-40
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50
A, I
B
=0
-5
-
-
V
Collector cut-off current
I
CBO
V
CB
=-20V, I
B
=0
-
-
-1
A
Emitter cut-off current
I
EBO
V
EB
=-4V, V
BE
=0
-
-
-1
A
V
CE
=-3V, I
C
=-500mA
80
-
390
-
DC current gain
h
FE
V
CE
=-3V, I
C
=-3A
10
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-2A, I
B
=-200mA
-
-0.5
-0.8
V
Transition frequency
f
T
V
CE
=-5V, I
C
=-500mA,
f=1MHz
-
120
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
13
-
pF
* : h
FE
rank / O : 80~218, Y : 120~270, G : 180~390
KST-D001-001
3
STA723D
Fig. 2 V
CE(sat)
- I
C
Electrical Characteristic Curves
Fig. 4 C
Ob
- V
R
Fig. 3 f
T
- I
C
Fig. 1 h
FE
- I
C