KST-1003-000
1
STC128M
NPN Silicon Transistor
Features
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6(Max.) (I
B
=1mA)
Ordering
Information
Type NO. Marking Package Code
STC128M C128 TO-92M
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Emitter
2. Collector
3. Base
14.0
0.40
4.00.1
0.44 REF
0.52 REF
3.0
0.1
1.27 Typ.
2.540.1.
3.00.1
0.42 Typ.
0.7 Typ
.
1 2 3
3.8 Min.
KST-1003-000
2
STC128M
Absolute maximum ratings
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
20 V
Collector-Emitter voltage
V
CEO
15 V
Emitter-base voltage
V
EBO
6.5 V
Collector current
I
C
1 A
Collector dissipation
P
C
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BV
CBO
I
C
=50A, I
E
=0
20 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 15
-
-
V
Emitter-base breakdown voltage
BV
EBO
I
E
=50A, I
C
=0
6.5 - - V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0 -
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=6V, I
C
=0 -
-
0.1
A
DC current gain
h
FE
V
CE
=1V, I
C
=100mA 150
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA -
0.1
0.3
V
Transistor frequency
f
T
V
CE
=5V, I
C
=50mA -
260
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
On resistance
R
ON
f=1KHz,
I
B
=1Ma, V
IN
=0.3V - 0.6 -
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