KST-B001-000
1
STC352
NPN Silicon Transistor
Descriptions
High current application
Audio power amplifier
Features
High current : I
C
= 2A
Complementary pair with STA353
Ordering
Information
Type NO. Marking Package Code
STC352 STC352 MPT
Outline Dimensions unit :
mm
PIN Connections
1. Emitter
2. Collector
3. Base
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
2.5
0.1
.
1
6.5
0.2
1.2 Max.
5.0
0.2
3.
4
0.
2
21.
5
1.
0
2.
0
0.
1
0.
5
0.
2
1.
1
0.
1
8.
5
0.
2
12.
5
M
i
n
.
0.4~0.6
0.70 Max.
2 3
KST-B001-000
2
STC352
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
40 V
Collector-Emitter voltage
V
CEO
30 V
Emitter-Base voltage
V
EBO
5 V
Collector current
I
C
2 A
Emitter Current
I
E
-2 A
Collector dissipation
P
C
1.2 W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=100
A, I
E
=0
40 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=10mA, I
B
=0 30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=1mA, I
C
=0 5
-
-
V
Collector cut-off current
I
CBO
V
CB
=40V, I
E
=0 -
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 -
-
0.1
A
DC current gain
h
FE
*
V
CE
=2V, I
C
=500mA 100
-
320
-
Base-Emitter on voltage
V
BE(ON)
V
CE
=2V, I
C
=500mA -
-
1
V
V
CE(sat)1
I
C
=2A, I
B
=0.2A -
-
0.8
Collector-Emitter saturation voltage
V
CE(sat)2
I
C
=1.5A, I
B
=0.03A -
-
2
V
Transition frequency
f
T
V
CE
=5V, I
C
=500mA -
120
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
13
-
pF
* : h
FE
rank / O : 100~200, Y : 160~320
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