KST-9058-002
1
STS123
NPN Silicon Transistor
Features
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6
(Max.) (I
B
=1mA)
Ordering
Information
Type NO. Marking Package Code
STS123 STS123 TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
2
0
0.
1
0.
3
8
14.
0
0.
40
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9058-002
2
STS123
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
20
V
Collector-Emitter voltage
V
CEO
15
V
Emitter-base voltage
V
EBO
6.5
V
Collector current
I
C
1
A
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
20
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
15
-
-
V
Emitter-base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
6.5
-
-
V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=6V, I
C
=0
-
-
0.1
A
DC current gain
h
FE
V
CE
=1V, I
C
=100mA
150
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.1
0.3
V
Transistor frequency
f
T
V
CE
=5V, I
C
=50mA
-
260
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
On resistance
R
ON
f=1KHz, I
B
=1mA, V
IN
=0.3V
-
0.6
-
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