LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V
LOW POWER CONSUMPTION: 15 mW TYP
SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
FEATURES
DESCRIPTION
UPC2747T
The UPC2747T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This amplifier was designed for 900 MHz receivers in cellular
and cordless telephone applications. Operating on a 3 volt
supply (1.8 volt minimum) this IC is ideally suited for hand-
held, portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE AND
GAIN vs. FREQUENCY
V
CC
= 3.0 V, I
CC
= 5 mA
Noise Figure, NF (dB)
PART NUMBER
UPC2747T
PACKAGE OUTLINE
TO6
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CC
Circuit Current (no signal)
V
CC
= 3.0 V
mA
3.8
5.0
7.0
V
CC
= 1.8 V
mA
3.0
G
S
Small Signal Gain,
f = 900 MHz, V
CC
= 3.0 V
dB
9
12
14
f = 900 MHz, V
CC
= 1.8 V
dB
5.5
f
U1
Upper Limit Operating Frequency, V
CC
= 3.0 V
GHz
1.5
1.8
V
CC
= 1.8 V
GHz
1.8
P
SAT
Saturated Output Power,
f = 900 MHz, , V
CC
= 3.0 V
dBm
-9.5
-7
f = 900 MHz, V
CC
= 1.8 V
dBm
-14
NF
Noise Figure,
f = 900 MHz, V
CC
= 3.0 V
dB
3.3
4.5
f = 900 MHz, V
CC
= 1.8 V
dB
5.2
RL
IN
Input Return Loss,
f = 900 MHz, V
CC
= 3.0 V
dB
11
14
f = 900 MHz, V
CC
= 1.8 V
dB
11
RL
OUT
Output Return Loss,
f = 900 MHz, V
CC
= 3.0 V
dB
7
10
f = 900 mHz, V
CC
= 1.8 V
dB
13
ISOL
Isolation,
f = 900 MHz, V
CC
= 3.0 V
dB
35
40
f = 900 MHz, V
CC
= 1.8 V
dB
34
OIP
3
SSB Output Third Order Intercept
, f1 = 500 MHz, f2 = 510 MHz, V
CC
= 3.0 V
dBm
-3
f1 = 900 MHz, f2 = 902 MHz, V
CC
= 3.0 V
dBm
-3
f1 = 1000 MHz, f2 = 1010 MHz, V
CC
= 3.0 V
dBm
-2
f1 = 900 MHz, f2 = 902 MHz, V
CC
= 1.8 V
dBm
-10
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
C/W
620
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
C/W
230
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, Z
L
= Z
S
= 50
)
Frequency, f (MHz)
0 1000 2000
G
S
NF
14
12
10
8
4.5
4.0
3.5
3.0
Gain, G
S
(dB)
3 V, 900 MHz
Si MMIC AMPLIFIER
Note:
1.The gain at f
U
is 3 dB down from the gain at 100 MHz.
California Eastern Laboratories
UPC2747T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
Supply Voltage
V
4.0
I
CC
Total Supply Current
mA
15
P
IN
Input Power
dBm
0
P
T
Total Power Dissipation
2
mW
280
T
OP
Operating Temperature
C
-40 to +85
T
STG
Storage Temperature
C
-55 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= 85
C).
SYMBOLS
PARAMETERS
UNITS
MIN
TYP MAX
V
CC
Supply Voltage
V
1.8
3
3.3
T
OP
Operating Temperature
C
-40
25
85
RECOMMENDED OPERATING CONDITIONS
V
CC
50
OUT
1000 pF
IN
50
1000 pF
1000 pF
6
1
4
2, 3, 5
TEST CIRCUIT
0 1 2 3 4
10
8
6
4
2
0
-60 -40 -20 0 20 40 60 80 100
10
8
6
4
2
0
V
CC
= 3.0 V
1.8 V
Frequency, f (MHz)
Frequency, f (MHz)
0 1000 2000
14
12
10
8
-40C
+25C
+85C
Noise Figure, NF (dB)
Gain, G
S
(dB)
Insertion Power Gain, Gp (dB)
Circuit Current, I
CC
(mA)
Operating Temperature T
OP
(
C)
Supply Voltage, V
CC
(V)
Circuit Current, I
CC
(mA)
CURRENT vs. VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
CURRENT vs. OPERATING
TEMPERATURE
GAIN vs. FREQUENCY
AND TEMPERATURE
GAIN AND NOISE FIGURE
vs. FREQUENCY
0.01 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
15
10
5
0
-5
V
CC
= 3.3 V
3.0 V
2.7 V
1.8 V
5
4
3
2
V
CC
= 3.3 V
3.0 V
2.7 V
V
CC
= 3.0 V
I
CC
= 5 mA
UPC2747T
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C, unless otherwise specified)
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
0
10
20
30
40
50
RLout (V
CC
= 3.0 V)
RLout (V
CC
= 1.8 V)
RLin (V
CC
= 1.8 V)
RLin (V
CC
= 3.0 V)
0.01 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
0
10
20
30
40
50
1.8 V
V
CC
= 3.0 V
Frequency, f (GH
Z
)
Frequency, f (GH
Z
)
-8.0
-10.0
-12.0
0 1000 2000
P
1dB
P
SAT
V
CC
= 3.0 V
I
CC
= 5 mA
Psat
P1dB
0 1000 2000
-16
-18
-20
V
CC
= 1.8 V
V
CC
= 1.8 V
I
CC
= 3 mA
POWER vs. FREQUENCY
POWER vs. FREQUENCY
RETURN LOSS vs. FREQUENCY
ISOLATION vs. FREQUENCY
Frequency, f (MHz)
Frequency, f (MHz)
OUTPUT POWER vs. INPUT POWER
AND VOLTAGE
OUTPUT POWER vs. INPUT POWER
AND TEMPERATURE
Input Power P
IN
(dBm)
Input Power P
IN
(dBm)
-40 -30 -20 -10 0
0
-10
-20
-30
V
CC
= 3.0 V
f = 900 MH
Z
T
A
= +85 C
+25 C
-40 C
-85 C
+25 C
-40 C
-40 -30 -20 -10 0
0
-10
-20
-30
f = 900 MH
Z
V
CC
= 3.3 V
3.0 V
2.7 V
Output Power (dBm)
Output Power, P
OUT
(dBm)
Isolation, ISOL (dB)
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
Output Power, (dBm)
Output Power, P
OUT
(dBm)
UPC2747T
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE T06
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
(Bottom View)
(Top View)
1. INPUT
2.. GND
3. GND
4. OUTPUT
5. GND
6. V
CC
2
1
4
5
6
2
1
4
5
6
3
3
LEAD CONNECTIONS
C1S
3.10
4
5
3
2
1
6
1.0
MIN
0.5 MIN
0.95
1.0
MIN
Note:
All dimensions are typical unless otherwise specified.
OUT
IN
V
CC
EQUIVALENT CIRCUIT
PART NUMBER
QTY
UPC2747T-E3
3K/Reel
Note:
Embossed Tape, 8 mm wide.
ORDERING INFORMATION
+0.2
-0.3
2.8
1.5
+0.2
-0.1
1
2
3
4
5
6
1.90.2
-0.05
+0.10
0.3
0.130.1
1.1
+0.2
-0.1
0 to 0.1
0.95
0.95
0.8
2.90.2
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -3/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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