MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
6.0
A
Peak Collector Current
ICM
10
A
Base Current
IB
2.0
A
Power Dissipation
PD
20
W
Power Dissipation (TA=25C)
PD
1.75
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JC
6.25
C/W
Thermal Resistance
JA
71.4
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEO
VCE=60V
50
A
ICES
VCE=100V
10
A
IEBO
VEB=5.0V
500
A
BVCEO
IC=30mA
100
V
VCE(SAT)
IC=6.0A, IB=600mA
1.5
V
VBE(ON)
VCE=4.0V, IC=6.0A
2.0
V
hFE
VCE=4.0V, IC=300mA
30
hFE
VCE=4.0V, IC=3.0A
15
75
fT
VCE=10V, IC=500mA, f=1.0MHz
3.0
MHz
hfe
VCE=10V, IC=500mA, f=1.0kHz
20
CJD41C NPN
CJD42C PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD41C,
CJD42C types are Complementary Silicon Power
Transistors manufactured by the epitaxial base
process, mounted in a surface mount package
designed for power amplifier and high speed
switching applications.
MARKING CODE: FULL PART NUMBER
Central
Semiconductor Corp.
TM
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
CJD41C NPN
CJD42C PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
R1 (26-September 2002)
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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