(Continued)
R2
CM4957
PNP HIGH FREQUENCY
SILICON TRANSISTOR
TO-72 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR CM4957 is a Silicon PNP RF Transistor, mounted in a hermetically sealed
package, designed for high frequency amplifier and non-saturated switching applications. This device is a
replacement for the 2N4957.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Base
Voltage
VCBO
30
V
Collector-Emitter
Voltage
VCEO
25
V
Emitter-Base
Voltage
VEBO
3.0
V
Collector Current - Continuous
IC
30
mA
Power Dissipation
PD
200
mW
Power Dissipation (TC=25C)
PD
300
mW
Operating and Storage
Junction
Temperature
TJ,Tstg
-65 to +200
C
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL TEST
CONDITIONS
MIN
TYP MAX
UNITS
ICBO
VCB=10V
100
nA
BVCBO
IC=100A
30
V
BVCEO
IC=1.0mA
25
V
BVEBO
IE=100A
3.0
V
hFE
VCE=10V, IC=2.0mA
20
150
fT
VCE=10V, IC=2.0mA, f=100MHz
1200
2500
MHz
Ccb
VCB=10V, IE=0, f=1.0MHz
1.6 2.0
pF
hfe
VCE=10V, IC=2.0mA, f=1.0kHz
20
200
Gpe
VCE=10V, IC=4.0mA, f=450MHz
17
25
dB
CM4957
PNP HIGH FREQUENCY TRANSISTOR
TO-72 CASE - MECHANICAL OUTLINE
Lead Code:
1) Emitter
2) Base
3) Collector
4) Case
MIN
MAX
MIN
MAX
A (DIA)
0.209
0.230
5.31
5.84
B (DIA)
0.175
0.195
4.45
4.95
C
-
0.030
-
0.76
D
0.170
0.210
4.32
5.33
E
0.500
-
12.70
-
F (DIA)
0.016
0.019
0.41
0.48
G (DIA)
H
J
0.036
0.046
0.91
1.17
K
0.028
0.048
0.71
1.22
TO-72 (REV: R1)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
0.100
2.54
0.050
1.27
R1
B
D
C
E
F
LEAD #1
LEAD #2
LEAD #3
G
H
J
K
A
45
LEAD #4
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