MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR= 10V
20
A
IR
VR= 30V
100
A
BVR
IR= 500A
40
V
VF
IF= 100A
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
CMLSH05-4DO
SURFACE MOUNT PICOmini
TM
DUAL ISOLATED, LOW VF
OPPOSING SILICON
SCHOTTKY DIODES
SOT-563 CASE
Central
Semiconductor Corp.
TM
R1 (27-January 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMLSH05-4DO consists of two (2) individual
electrically isolated 40 volt Schottky Diodes with
opposing polarity and packaged in a space saving
SOT-563 surface mount case. This PICOminiTM
device has been designed for applications
requiring a low forward voltage drop.
MARKING CODE: CO4
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
Central
Semiconductor Corp.
TM
SOT-563 CASE - MECHANICAL OUTLINE
CMLSH05-4DO
SURFACE MOUNT PICOmini
TM
DUAL ISOLATED, LOW VF
OPPOSING SILICON
SCHOTTKY DIODES
R1 (27-January 2004)
LEAD CODE:
1) ANODE D1
2) NC
3) CATHODE D2
4) ANODE D2
5) NC
6) CATHODE D1
MARKING CODE: CO4
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