Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
128
MAXIMUM RATINGS (TA=25oC)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1
sec.
IFSM
4000
mA
Forward Surge Current, tp=1 msec.
IFSM
2000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
JA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
VBR
IR=100
A
100
V
IR
VR=20V
25
nA
IR
VR=75V
5.0
A
VF
IF=10mA
1.0
V
CT
VR=0, f=1 MHz
4.0
pF
trr
IR=IF=10mA, RL=100
, Rec. to 1.0mA
4.0
ns
SOT-23 CASE
CMPD914
HIGH SPEED
SWITCHING DIODE
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPD914 type is a ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.
Marking code is C5D.