DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3410 type is
a NPN Low VCE (SAT) silicon transistor manufactured
by the epitaxial planar process and epoxy molded in an
SOT-23 surface mount package. This device is
designed for battery driven, handheld devices
requireing high current and Low VCE(SAT) voltages.
MARKING CODE: C341
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100A
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100A
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
20
50
mV
VCE(SAT)
IC=100mA, IB=10mA
35
75
mV
VCE(SAT)
IC=200mA, IB=20mA
75
150
mV
VCE(SAT)
IC=500mA, IB=50mA
130
250
mV
VCE(SAT)
IC=800mA, IB=80mA
200
400
mV
VCE(SAT)
IC=1.0A, IB=100mA
250
450
mV
VBE(SAT)
IC=800mA, IB=80mA
1.1
V
VBE(ON)
VCE=1.0V, IC=10mA
0.9
V
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
10
pF
CMPT3410
SURFACE MOUNT
NPN SILICON
LOW VCE (SAT) TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (15-November 2004)
PDF 
ZIP