Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
184
CMPT5401
PNP SILICON TRANSISTOR
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5401 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier applications.
Marking Code is C2L.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
ICBO
VCB=100V
50
nA
ICBO
VCB=100V, TA=150
o
C
50
A
BVCBO
IC=100
A
160
V
BVCEO
IC=1.0mA
150
V
BVEBO
IE=10
A
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.2
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.5
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.0
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.0
V
hFE
VCE=5.0V, IC=1.0mA
50
hFE
VCE=5.0V, IC=10mA
60
240
hFE
VCE=5.0V, IC=50mA
50
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
pF
185
R2
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
40
200
NF
VCE=5.0V, IC=200
A, RS=10
f=10Hz to 15.7kHz
8.0
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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