MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
2.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=80V
100
nA
IEBO
VEB=4.0V
100
nA
BVCBO
IC=100
A
80
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10A
5.0
V
VCE(SAT)
IC=0.5A, IB=50mA
100
mV
VCE(SAT)
IC=1.0A, IB=100mA
200
mV
VCE(SAT)
IC=2.0A, IB=200mA
400
mV
VBE(SAT)
IC=1.0A, IB=100mA
1.2
V
VBE(ON)
VCE=2.0V, IC=1.0A
1.0
V
hFE
VCE=2.0V, IC=50mA
75
hFE
VCE=2.0V, IC=500mA
100
300
hFE
VCE=2.0V, IC=1.0A
75
hFE
VCE=2.0V, IC=2.0A
40
fT
VCE=5.0V, IC=50mA, f=100MHz
75
MHz
CMPT651
SURFACE MOUNT
NPN HIGH CURRENT TRANSISTOR
SOT-23F CASE
Central
Semiconductor Corp.
TM
R0 ( 03-January 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT651
type is a high current NPN Silicon Transistor,
epoxy molded in a space saving Power SOT-
23F surface mount package, designed for high
current applications.
Marking code is C651.
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