MAXIMUM RATINGS: (TA=25C unless otherwise noted)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
240
V
Peak Repetitive Reverse Voltage
VRRM
300
V
Peak Repetitive Reverse Current
IO
200
mA
Continuous Forward Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp=1
s
IFSM
4000
mA
Forward Surge Current, tp=1 s
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=240V
100
nA
IR
VR=240V, TA=150C
100
A
BVR
IR=100
A
300
V
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
5.0
pF
trr
IF=IR=30mA, Rec. To 3.0mA, RL=100
50
ns
CMXD2004TO
SUPERmini
TM
TRIPLE ISOLATED OPPOSING
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
SOT 26 CASE
Central
Semiconductor Corp.
TM
R0 ( 29-November 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMXD2004TO consists of three (3) Isolated
High Voltage Silicon Switching Diodes arranged
in an alternating configuration in a SUPERmini
SOT-26 surface mount package, designed for
high voltage switching applications. This device
can be configured as a 900V switching diode.
See optional mounting pad configuration.
Marking code is X04TO.
Central
Semiconductor Corp.
TM
SOT 26 CASE - MECHANICAL OUTLINE
CMXD2004TO
SUPERmini
TM
TRIPLE ISOLATED OPPOSING
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
R0 ( 29-November 2001)
LEAD CODE:
1) Anode D1
2) Cathode D2
3) Anode D3
4) Cathode D3
5) Anode D2
6) Cathode D1
Opitional Mounting Pad Layout
For 900V Series Configuration
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